Journal
VACUUM
Volume 155, Issue -, Pages 210-213Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2018.06.017
Keywords
ZnO; Thin films; Ohmic contact
Funding
- Science and Technology Development Fund program of Universities of Tianjin [2017KJ250]
- National Natural Science Foundation of China [61274113, 11204212, 61404091, 51502203, 51502204]
- Tianjin Natural Science Foundation [13JCYBJC15700, 13JCZDJC26100, 14JCZDJC31500, 14JCQNJC00800]
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High resistance Zinc oxide (ZnO) films have been prepared on Si (100) substrates using magnetron sputtering method. Structure analysis revealed a clear out-of-plane orientation of ZnO (001) parallel to Si (100). The metallic composition of the contact is a critically important parameter for making ohmic contacts to ZnO films. Al/Ti metal contacts show linear I-V characteristics indicative of ohmic behavior, while other metal contacts such as Al and Ti show nonlinear characteristics with rectification, that reveal the presence of schottky barriers.
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