Journal
THIN SOLID FILMS
Volume 645, Issue -, Pages 358-362Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2017.11.010
Keywords
Beta-gallium oxide; Wide-bandgap semiconductors; Electrospinning
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Funding
- Agency for Defense Development [ADD-15-113-205-020]
- Basic Science Research Program, National Research Foundation of Korea (NRF) [2017R1A2B4012278]
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beta-Ga2O3 nanofibers of sub-50 nm diameter are formed using a GaCl3, polyvinylpyrrolidone, and deionized water solution via an electrospinning method. The as-electrospun amorphous nanofibers turn into polycrystalline nanofibers of monoclinic phase after annealing at 900 degrees C for 6 h. Material properties of the nanofibers are investigated using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. In addition, the nanofibers' optical bandgap is measured via the direct-bandgap model. Unlike the conventional ethanol-contained solvent and Ga(NO3)(3), the ethanol-free solvent and GaCl3 led to sub 50-nm diameter Ga2O3 nanofiber that could be applied to power devices (rather than a conventional 3-dimentioinal beta-Ga2O3 substrate) to effectively remove the heat generated during device operation.
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