Journal
IEEE SENSORS JOURNAL
Volume 15, Issue 12, Pages 6954-6961Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2015.2467316
Keywords
Nanocrystalline; zinc oxide; titanium dioxide; Pd modification; hydrogen sensor
Funding
- Council of Scientific and Industrial Research
- UGC UPE- II, Government of India
- Council of Scientific and Industrial Research under the Pool Scheme, Government of India
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Nanocrystallyne n-ZnO and p-TiO2 thin films were deposited on crystalline Si substrate by the simple and low-cost sol-gel method. The surfaces of nanocrystalline ZnO and TiO2 were modified by PdCl2 solution to passivate the defect states and to improve the gas sensitivity. Both unmodified and Pd modified sensors with Pd-Ag/n-ZnO/p-Si/Al and Pd-Ag/p-TiO2/p-Si/Al device structures were exposed to different hydrogen concentrations (0.01%, 0.05%, 0.1%, 0.5%, and 1%) at the optimum biasing voltage and temperature. The effect of gas response was investigated using nitrogen as well as synthetic air as the carrier gas. Both the sensor configurations showed the improved gas response after surface treatment with Pd ions. Surface modified p-TiO2 sensors recorded higher gas response (78%), response time (3 s), and recovery time (74 s) compared with ZnO sensors under the similar conditions.
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