Journal
SOLID STATE COMMUNICATIONS
Volume 270, Issue -, Pages 151-154Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2017.12.009
Keywords
HgTe quantum well; Topological insulator; Magnetic barrier
Categories
Funding
- National Key R&D Program of China [2016YFA02023]
- NSFC [61774168]
- Opening Project of MEDIT, CAS
Ask authors/readers for more resources
Electron tunneling through a single magnetic barrier in a HgTe topological insulator has been theoretically investigated. We find that the perpendicular magnetic field would not lead to spin-flip of the edge states due to the conservation of the angular moment. By tuning the magnetic field and the Fermi energy, the edge channels can be transited from switch-on states to switch-off states and the current from unpolarized states can be filtered to fully spin polarized states. These features offer us an efficient way to control charge/spin transport in a HgTe/CdTe quantum well, and pave a way to construct the nanoelectronic devices utilizing the topological edge states.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available