Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 184, Issue -, Pages 31-37Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2018.04.023
Keywords
Organic photovoltaic devices; Indoor lighting conditions; Ethoxylated-polyethylenimine surface modification; Shunt resistance; Inverted structure; Equivalent-circuit model
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2015R1C1A1A01051841]
- Technology Development Program to Solve Climate Changes of the NRF - Ministry of Science, ICT & Future Planning [NRF-2016M1A2A2940912]
- Korea Institute of Energy Technology Evaluation and Planning (KETEP) [20174030201520]
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The objective of this study is to determine the photovoltaic properties of inverted organic photovoltaic devices (OPVs) that employ indium-tin oxide (ITO) modified by ethoxylated polyethylenimine (PEIE) as an electron collecting electrode under indoor lighting conditions. Owing to the reduced current generation at low light intensity, possessing a sufficiently large shunt resistance (R-P) associated with a low leakage current is of utmost importance for performance maximization. The photovoltaic properties under this lighting condition were optimized by controlling the thickness of the PEIE layers, and the electrical, optical, and surface properties of the PEIE-modified ITO were determined. Inverted OPVs based on poly(3-hexylthiophene)-indene-C-60 bisadduct (P3HT-ICBA) with an 8.5-nm-thick PEIE layer yielded a maximum power-conversion efficiency (PCE) of 13.9% under an LED light with a luminance of 5001x. Meanwhile, the same device showed poor performance with a PCE of 3.1% under 1 sun illumination owing to the insulating nature of PEIE.
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