4.7 Article

Minimizing the energy loss of perovskite solar cells with Cu+ doped NiOx processed at room temperature

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 182, Issue -, Pages 128-135

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2018.01.025

Keywords

Perovskite solar cells; NiOx; Hole transport layer; DC magnetron sputtering; Cu+ doping

Funding

  1. high-tech project of MOST [2014AA032802]
  2. national sci-tech support plan the National Natural Science Foundation of China (NSFC) [51372264]
  3. Science and Technology Commission of Shanghai Municipality (STCSM) [14DZ2261200]
  4. Shanghai Municipal Natural Science Foundation [16ZR1441000]

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Room-temperature direct current magnetron sputtering was employed to prepare pristine and Cu+ doped NiOx films for perovskite solar cells (PSCs). Optimal power conversion efficiency (PCE) of about 15% was obtained with a 20 nm thick film with copper content of 5.7%. The solar cells based on as sputtered films demonstrated high reproducibility and stability. The origin of dramatically boosted photovoltaic performance of PSCs based on Cu doped NiOx was analysed from energy loss considerations. The optical, carrier transport as well as recombination losses were discussed. According to our results, PSC with Cu doped NiOx have lower recombination and transport loss which ensured the hysteresis free high efficiency.

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