Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 27, Issue 8, Pages 915-918Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2015.2400446
Keywords
IGO; phototransistors; Ga2O3
Funding
- Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan through the Ministry of Education, Taiwan
- Bureau of Energy, Ministry of Economic Affairs of Taiwan [102-E0603]
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The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were similar to 10(5) and 0.18 A/W.
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