Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 27, Issue 4, Pages 333-335Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2014.2365577
Keywords
Diode pumped; Pr3+:LiYF4 crystal; deep red laser
Funding
- National Natural Science Foundation of China [61275050]
- Specialized Research Fund for the Doctoral Program of Higher Education [20120121110034, 20130121120043]
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We report the first laser operation at pi-polarized 670.34-nm deep red laser in a 2-W InGaN-LD-pumped Pr3+:LiYF4 (Pr:YLF) crystal with the aid of a 0.1-mm intracavity etalon, to the best of our knowledge. The maximum output power of this laser emission was up to 87.6 mW with slope efficiency of similar to 11.9% with respect to the absorbed pump power. The beam propagation factors in x-direction and y-direction were measured to be 1.49 and 1.05, respectively.
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