Selective metallization of amorphous-indium–gallium–zinc-oxide thin-film transistor by using helium plasma treatment

Published 2018 View Full Article

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Title
Selective metallization of amorphous-indium–gallium–zinc-oxide thin-film transistor by using helium plasma treatment
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 33, Issue 3, Pages 035011
Publisher
IOP Publishing
Online
2018-01-23
DOI
10.1088/1361-6641/aaa9e7

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