Thermodynamic Analysis of the Behavior of Trimethyl Borate as a Precursor for Chemical Vapor Deposition of Boron-Containing Films

The chemical vapor deposition (CVD) of boron-containing films involving the trimethyl borate precursor has been modeled in the ranges of pressures 0.03 D , Torr 760 and temperatures 300 D cent, K 2000. The CVD diagram of this system was found to feature existence fields of the following phase complexes: D' + D'D-4, D'4D + D'D-2(3), D + D'D-2(3) + D'D-4, D + D'D-2(3), D + D'D-2(3) + DeD'D-2, D + DeD'D-2, D + D'D-4, and a D'D-4 phase.