A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography

Published 2015 View Full Article

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Title
A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography
Authors
Keywords
-
Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 50, Issue 10, Pages 2406-2418
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-09-11
DOI
10.1109/jssc.2015.2467170

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