A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits

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Title
A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits
Authors
Keywords
-
Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 50, Issue 1, Pages 191-203
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2014-10-15
DOI
10.1109/jssc.2014.2360379

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