Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 215, Issue 16, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201700887
Keywords
defects; ion implantation; photoluminescence; Rutherford backscattering; zinc oxide
Funding
- Polish National Centre for Research and Development (NCBiR) [PBS2/A5/34/2013]
- Polish Ministry of Science and Higher Education [3418/SPIRIT/2015/0]
- Helmholtz Zentrum Dresden-Rossendorf (HZDR) [15100222-ST, 16000696-ST]
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Defect agglomeration in ion-implanted compound semiconductors produces lattice stress eventually causing plastic deformation at sufficiently high fluence. Consequently, a dislocations tangle is formed which can hardly be completely removed by thermal annealing. To solve this problem, a new method of sequential processing has been developed consisting of low fluence ion implantation followed by subsequent annealing. The procedure can be then repeated until the required impurity concentration has been reached without producing excessive damage. Epitaxial ZnO layers are grown using the atomic layer deposition (ALD) technique. Structural changes in ZnO epilayers due to Yb-ion implantation and subsequent annealing are analyzed by Rutherford backscattering/channeling (RBS/c) and photoluminescence (PL). Correlation between defect transformations and PL efficiency is determined. Increased Yb-atom optical activation upon sequential processing as compared to the standard single-step annealing is observed.
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