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Electron paramagnetic resonance study of impurities and point defects in oxide crystals

Journal

OPTO-ELECTRONICS REVIEW
Volume 26, Issue 2, Pages 81-91

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.opelre.2018.02.002

Keywords

Electron paramagnetic resonance; Oxide crystals; Point defects; Mn2+; Mn4+; Co2+; Fe3+; Cr3+; Nd3+ and Er3+ ions; Optical materials; Spin-Hamiltonian; Superposition model; Spin-lattice relaxation time

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In this topic review the results of the X-band electron paramagnetic resonance (EPR) measurements of Mn, Co, Cr, Fe ions in YAlO3 (YAP) crystals and Fe ions in LiNbO3 (LNO) crystals and of chromium doped Bi12GeO20 (KO) and Ca4GdO(BO3)(3) single crystals, are presented. It is well known that the oxide crystals (for example:YAP, LNO, BGO) are one of the most widely used host materials for different optoelectronic applications. The nature of point defect of impurities and produced in the oxide crystal after irradiation by bismuth ions and after irradiation by the 235U ions with energy 9.47 MeV/u and fluency 5 x10(11)cm(-1) is discussed. The latter is important for applications of these oxide crystal as laser materials. (C) 2018 Published by Elsevier B.V. on behalf of Association of Polish Electrical Engineers (SEP).

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