Design and analysis of InN - In0.25Ga0.75N single quantum well laser for short distance communication wavelength

A single quantum well semiconductor laser based on wurtzite-nitride is designed and analyzed for short distance communication wavelength (at around 1300 nm). The laser structure has 12 angstrom well layer of InN, 15 angstrom barrier layer of In0.25Ga0.75N, and 54 angstrom separate confinement heterostructure layer of GaN. To calculate the electronic characteristics of the structure, a self-consistent method is used where Hamiltonian with effective mass approximation is solved for conduction band while six-bands Hamiltonian matrix with k.p formalism including the polarization effect, valence-band mixing effect, and strain effect is solved for valence band. The interband optical transition elements, optical gain, differential gain, radiative current density, spontaneous emission rate, and threshold characteristics have been calculated. The wave function overlap integral is found to be 45.93% for TE-polarized structure. Also, the spontaneous emission rate is found to be 6.57 x 10(27) s(-1) cm(-3) eV(-1) at 1288.21 nm with the carrier density of 5 x 10(19) cm(-3). Furthermore, the radiative current density and the radiative recombination rate are found to be 121.92 Acm(-2) and 6.35 x 10(27) s(-1) cm(-)3(,) respectively, while the TE-polarized optical gain of the structure is 3872.1 cm-1 at 1301.7 nm. (C) 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)