Journal
NANOTECHNOLOGY
Volume 29, Issue 15, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aaac09
Keywords
ion irradiation; tungsten oxide; nanowires; point defects
Funding
- National Science Fund for Excellent Young Scholars [11522543]
- Natural Science Foundation of China [11475129, 51571153]
- Program for New Century Excellent Talents in University [NCET-13-0438]
- Natural Science Foundation of Hubei Province, China [2016CFA080]
- Natural Science Foundation of Jiangsu Province, China [BK20161247]
- Fundamental Research Funds for the Central Universities [2042017kf0194]
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Here we reported the fabrication of tungsten oxide (WO3-x) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 10(6)-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.
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