2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning
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Title
2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning
Authors
Keywords
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Journal
Nanoscale
Volume 10, Issue 28, Pages 13767-13772
Publisher
Royal Society of Chemistry (RSC)
Online
2018-06-21
DOI
10.1039/c8nr02843e
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