Bandgap broadening at grain boundaries in single-layer MoS2

Direct Growth of MoS2/h-BN Heterostructures via a Sulfide-Resistant Alloy

(2016) Lei Fu et al.   ACS Nano

Edge states of graphene wrinkles in single-layer graphene grown on Ni(111)

(2016) Liwei Liu et al.   APPLIED PHYSICS LETTERS

Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide

(2016) Yu Li Huang et al.   NANO LETTERS

Precisely Aligned Monolayer MoS2Epitaxially Grown on h-BN basal Plane

(2016) Hua Yu et al.   Small

Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries

(2016) Thuc Hue Ly et al.   Nature Communications

Surface Defects on Natural MoS2

(2015) Rafik Addou et al.   ACS Applied Materials & Interfaces

Visualizing Point Defects in Transition-Metal Dichalcogenides Using Optical Microscopy

(2015) Hye Yun Jeong et al.   ACS Nano

Spectroscopic Visualization of Grain Boundaries of Monolayer Molybdenum Disulfide by Stacking Bilayers

(2015) Seki Park et al.   ACS Nano

Large-Area Epitaxial Monolayer MoS2

(2015) Dumitru Dumcenco et al.   ACS Nano

Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene

(2015) Xiaolong Liu et al.   ACS Nano

Graphite edge controlled registration of monolayer MoS2 crystal orientation

(2015) Chun-I Lu et al.   APPLIED PHYSICS LETTERS

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Superconductivity protected by spin–valley locking in ion-gated MoS 2

(2015) Yu Saito et al.   Nature Physics

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide

(2015) Wei Bao et al.   Nature Communications

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

(2015) Yu Li Huang et al.   Nature Communications

Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide

(2014) Sina Najmaei et al.   ACS Nano

Grain Boundaries in Graphene on SiC(0001̅) Substrate

(2014) Yann Tison et al.   NANO LETTERS

Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending

(2014) Chendong Zhang et al.   NANO LETTERS

Evidence of van Hove Singularities in Ordered Grain Boundaries of Graphene

(2014) Chuanxu Ma et al.   PHYSICAL REVIEW LETTERS

The valley Hall effect in MoS2 transistors

(2014) K. F. Mak et al.   SCIENCE

Doping mechanisms in graphene-MoS2 hybrids

(2013) B. Sachs et al.   APPLIED PHYSICS LETTERS

Line Defects in Molybdenum Disulfide Layers

(2013) Andrey N. Enyashin et al.   Journal of Physical Chemistry C

Intrinsic Structural Defects in Monolayer Molybdenum Disulfide

(2013) Wu Zhou et al.   NANO LETTERS

Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

(2013) Arend M. van der Zande et al.   NATURE MATERIALS

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers

(2013) Sina Najmaei et al.   NATURE MATERIALS

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

(2013) Yingchun Cheng et al.   RSC Advances

Predicting Dislocations and Grain Boundaries in Two-Dimensional Metal-Disulfides from the First Principles

(2012) Xiaolong Zou et al.   NANO LETTERS

Engineering the surface structure of MoS2 to preferentially expose active edge sites for electrocatalysis

(2012) Jakob Kibsgaard et al.   NATURE MATERIALS

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Topological defects in graphene: Dislocations and grain boundaries

(2010) Oleg V. Yazyev et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS