4.8 Article

Ultrathin Bismuth Film on 1T-TaS2 : Structural Transition and Charge-Density-Wave Proximity Effect

Journal

NANO LETTERS
Volume 18, Issue 5, Pages 3235-3240

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.8b01003

Keywords

Charge density wave; Rashba metal; photoemission spectroscopy; band structure; ultrathin film

Funding

  1. JSPS KAKENHI [JP15H05853, JP25107003, JP25107004, JP17H01139, JP15H02105, JP26287071, JP25287079]

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We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS2 and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS2 undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level (E-F), the energy band of the same film on 1T-TaS2 exhibits holelike dispersion with a finite energy gap at E-F. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.

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