Growth and properties of one-dimensional β-Ga2O3 nanostructures on cplane sapphire substrates

One-dimensional beta-Ga2O3 nanostructures were grown at different temperatures on c-plane sapphire substrates by MOCVD using Au as catalyst. The structural, morphological and photoluminescence properties of beta-Ga2O3 nanostructures grown at different temperatures were characterized and compared in detail. As the growth temperature was increased, beta-Ga2O3 nanostructures exhibited improved crystalline quality and possessed a typical beta-Ga2O3 structure with high purity. The beta-Ga2O3 nanostructures grown at 750 degrees C showed intense ultraviolet-blue emission at room temperature. Different morphologies including islands-like, nanowires, nanorods, grain-like structures were obtained depending on the growth temperature. The correlation between the nanostructures shapes and the growth processes was also discussed.