Article
Computer Science, Information Systems
Abdullah Al Mamun Mazumder, Kamal Hosen, Md Sherajul Islam, Jeongwon Park
Summary: This study presents a nanowire gate-all-around negative capacitance tunnel field-effect transistor (GAA-NC-TFET) with a high-K dielectric and ferroelectric layer. The proposed device overcomes the limitations of conventional MOSFETs, exhibiting improved performance and high on-state current. The incorporation of negative capacitance effect results in low subthreshold swing, large transconductance, and low threshold voltage. This research is of great significance for developing electronic devices with higher speed and lower power consumption.
Article
Nanoscience & Nanotechnology
Yiheng Yin, Zhaofu Zhang, Hongxia Zhong, Chen Shao, Xuhao Wan, Can Zhang, John Robertson, Yuzheng Guo
Summary: The study demonstrates that single trigonal-tellurium NW FETs outperform three trigonal-tellurium NW FETs, with the former achieving both high-performance and low-dissipation goals with a 5 nm gate length. The devices show promising results in terms of on-state current and subthreshold swing, indicating the potential of GAA Te MOSFETs for cutting-edge sub-5 nm device applications.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Hao Zhang
Summary: In this letter, a quasi-broken gap tunneling field effect transistor (QB-TFET) based on InGaAs/GaAsSb heterojunction is proposed and investigated. The tunneling efficiency of QB-TFET is improved by applying a trench gate structure, an InGaAs pocket layer, and an intrinsic InGaAs spacer. The gate dielectric is made of TiO2 to enhance the control ability of gate voltage on the channel. The electrical characteristic of QB-TFET with different compositions of InGaAs and GaAsSb is analyzed, and the proposed QB-TFET shows superior performance compared to other works.
Article
Engineering, Electrical & Electronic
Prateek Kumar, Maneesha Gupta, Kunwar Singh, Naveen Kumar
Summary: Due to the increase in short channel effects, metal oxide semiconductor field-effect transistors are struggling to keep up with Moore's law. While solutions like tunnel field-effect transistors or junctionless transistors are difficult to fabricate, metal oxide semiconductor field-effect transistors continue to play a key role in the industry. In this study, a single transistor-based AND logic gate is designed using 2-dimensional transition metal dichalcogenides and the back-gate technique to enhance channel control and achieve low power dissipation.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Analytical
Sarabdeep Singh, Leo Raj Solay, Sunny Anand, Naveen Kumar, Ravi Ranjan, Amandeep Singh
Summary: This paper investigates the performance of a Gate-Engineered Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA-DMG-GS-CP NW-FET) and its application in a common source (CS) amplifier circuit. The GAA-DMG-GS-CP NW-FET incorporates dual-material gate (DMG) and gate stack (GS) techniques, and its analog/RF performance is compared to the Gate-All-Around Single-Material Gate Charge Plasma Nanowire Field Effect Transistor (GAA-SMG-CP NW-FET). The proposed GAA-DMG-GS-CP NW-FET device shows superior current characteristics and achieves a gain of 15.06 dB in the CS amplifier circuit. The results demonstrate the strong potential of the GAA-DMG-GS-CP NW-FET for future nanoscale and low-power applications.
Article
Engineering, Electrical & Electronic
Rajiv Ranjan Thakur, Nidhi Chaturvedi
Summary: This work focuses on the design optimization and performance analysis of GaN nanowire field effect transistors with gate lengths of 3 nm, 5 nm, and 7 nm. Through simulation, it was found that the performance varied in terms of integration density, power density, I-on/I-off ratio, and switching speed under different gate length conditions. Ultimately, optimized parameters were determined for digital and biosensing applications.
JOURNAL OF ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Analytical
Tatyana E. Smolyarova, Lev Shanidze, Anna Lukyanenko, Filipp A. Baron, Vasilisa V. Krasitskaya, Anna S. Kichkailo, Anton S. Tarasov, Nikita Volkov
Summary: In this study, a top-down nanofabrication approach was used to create silicon nanowire-based back gate field-effect transistors for biomolecular detection. Physical mechanisms of charge carrier transport in the nanowire were explained using energy band diagrams and numerical simulations, which matched well with experimental results and can be applied to develop novel nanowire-based biosensors.
Article
Nanoscience & Nanotechnology
Narasimhulu Thoti, Yiming Li
Summary: This work demonstrates the effectiveness of using ferroelectricity in tunneling field-effect transistors (TFETs). By optimizing the metal-ferroelectric-semiconductor (OMFS) structure, the utilization of polarization and electric fields of the ferroelectric material Hf0.5Zr0.5O2 in the tunneling region is significantly improved. In addition, the TFET geometry and other enhancements further enhance the performance of TFETs.
Article
Chemistry, Multidisciplinary
Pattunnarajam Paramasivam, Naveenbalaji Gowthaman, Viranjay M. Srivastava
Summary: This research work focuses on the design and analysis of the structural properties of group IV and III-V oriented, rectangular Silicon and Gallium Arsenide Nanowires using sp(3)d(5)s* tight-binding models. The electrical characteristics of the Nanowires, with the orientation of z [001] and shielded with Lanthanum Oxide, have been analyzed using the Non-Equilibrium Green Function method. The findings show that Gate-All-Around Si Nanowires have superior performance with high (I-ON/I-OFF ratio) and low leakage current.
Article
Engineering, Electrical & Electronic
Yi-Wen Lin, Hao-Hsiang Chang, Yu-Hsien Huang, Chong-Jhe Sun, Siao-Cheng Yan, Shan-Wen Lin, Guang-Li Luo, Chien-Ting Wu, Yung-Chun Wu, Fu-Ju Hou
Summary: The proposed use of tightly stacked diamond-shaped Ge nanowire gate-all-around field-effect transistors shows high performance and superior gate control for sub-3nm node applications, making it a feasible approach for continuous scaling in CMOS technology platforms.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Multidisciplinary Sciences
Rasmita Barik, Rudra Sankar Dhar, Falah Awwad, Mousa I. Hussein
Summary: This study develops the incubation of strained nano-system in the form of a tri-layered structure as a nanowire channel in the CGAA FET. The system utilizes Type-II hetero-strain alignment in the channel, resulting in improved carrier mobility. The 10 nm strained-channel CGAA FET demonstrates significant enhancements in ON current and drain current, making it the most suitable device in the nano regime.
SCIENTIFIC REPORTS
(2023)
Article
Computer Science, Information Systems
Yeji Kim, Yoongeun Seon, Soowon Kim, Jongmin Kim, Saemin Bae, Inkyung Yang, Changhyun Yoo, Junghoon Ham, Jungmin Hong, Jongwook Jeon
Summary: A compact model describing current-voltage relationships of an NC GAA-FET with interface trap effects was proposed, showing good agreement with numerical calculations. By using the model, the electrical properties of the NC GAA-FET were explored by varying basic design parameters.
Article
Quantum Science & Technology
Basudev Nag Chowdhury, Sanatan Chattopadhyay
Summary: This study investigates the performance of a dual-gate GaAs-nanowire field-effect transistor (FET) as a charge-qubit device operating at room temperature. By applying appropriate biases, two voltage tunable quantum dots are created within the nanowire channel, allowing for charge-qubit operation at room temperature. The associated electron transport is modeled using the nonequilibrium Green's function formalism. Experimental results show a coherent oscillation frequency of approximately 25 MHz and a characteristic decay time of approximately 70 ns for the qubit. These findings suggest that the dual gate nanowire FET holds promise for charge-qubit operation at room temperature.
ADVANCED QUANTUM TECHNOLOGIES
(2023)
Article
Chemistry, Physical
Rishu Chaujar, Mekonnen Getnet Yirak
Summary: In this study, a junctionless gate all around silicon nanowire field-effect transistor (JL-GAA-SiNWFET) sensor was used to detect hydrogen gas (H-2). The sensor showed satisfactory characteristics for safety in handling hydrogen and selectivity in monitoring H-2 among other gases. The shifts in threshold voltage (V-th), Ion, and Ioff due to changes in the palladium (Pd) gate work function make it a sensitive parameter for detecting H-2 gas molecules. The results revealed that JL-GAA-SiNWFET-based sensors had improved sensitivity compared to GAA-MOSFET and MOSFET.
Article
Engineering, Electrical & Electronic
Vivek Kumar, Ravindra Kumar Maurya, Malvika, Gopal Rawat, Kavicharan Mummaneni
Summary: In this study, a high-k dielectric hafnium dioxide and lead zirconate titanate (PZT) were used as a ferroelectric (FE) layer in the gate stack. The obtained I-on/I-off ratio of 10(13) and subthreshold swing of 49.7 mV dec(-1) are the most significant findings, surpassing previous research. There is a notable improvement in the on-state current (I (on)) and off-state current (I (off)). Additionally, the relatively high values of transconductance (g (m)) and transconductance generation factor (g (m)/I (d)) suggest that the device could be used for low power applications. These enticing findings indicate that the proposed PZT GAA-NCFET nanowire could pave the way for low power devices.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Multidisciplinary Sciences
T. Vasen, P. Ramvall, A. Afzalian, G. Doornbos, M. Holland, C. Thelander, K. A. Dick, L. -E. Wernersson, M. Passlack
SCIENTIFIC REPORTS
(2019)
Article
Nanoscience & Nanotechnology
Aryan Afzalian
Summary: By utilizing accurate dissipative DFT-NEGF atomistic simulation techniques and exploring alternative materials, high-performance CMOS applications at sub-10nm scaling can be achieved. The concept of dynamically doped field-effect transistor addresses the challenge of doping in ultra-scaled devices and 2D materials.
NPJ 2D MATERIALS AND APPLICATIONS
(2021)
Article
Engineering, Electrical & Electronic
A. Afzalian, E. Akhoundi, G. Gaddemane, R. Duflou, M. Houssa
Summary: This paper presents advanced density functional theory and nonequilibrium Green's function techniques implemented in ATOMOS for exploring transport in novel materials and devices, particularly in van der Waals heterojunction transistors. The methodologies used include plane-wave DFT, Wannierization, and linear combination of atomic orbital DFT to create orthogonal and nonorthogonal NEGF models, with a focus on electron-phonon scattering within a nonorthogonal framework. Applications of these methods include exploration of novel 2-D materials and devices, such as dynamically doped FETs and vdW tunneling field-effect transistors.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Analytical
Aryan Afzalian, Denis Flandre
Summary: In this study, the NEGF quantum transport simulations were used to investigate the fundamental detection limit of ultra-scaled Si nanowire FET biosensors. It was found that a N-doped NWT showed greater sensitivity towards negatively charged analytes due to the nature of the detection mechanism. The results predicted significant threshold voltage shifts in the presence of a single-charge analyte. However, the sensitivity decreased when using typical ionic solutions and SAM conditions, but was still capable of detecting a single 20-base-long DNA molecule in solution with a predicted signal-to-noise ratio of 10.
Article
Chemistry, Physical
Elaheh Akhoundi, Michel Houssa, Aryan Afzalian
Summary: Using non-equilibrium Green's function simulations combined with first-principles density functional theory, we investigate the impact of electron-phonon coupling on edge-state transport in two-dimensional topological insulators. We find that the transport in a topological insulator with a small bulk gap, like stanene, is heavily affected by electron-phonon scattering, while bismuthene with a larger bulk gap shows higher immunity to electron-phonon scattering. Finite-size effects in stanene ribbons are also studied to mitigate the negative effects of a small bulk gap. Additionally, topological insulator ribbons are used as materials for field-effect transistors, and the results reveal the potential of manipulating edge states and opening a gap in stanene ribbons.
Article
Nanoscience & Nanotechnology
Rutger Duflou, Geoffrey Pourtois, Michel Houssa, Aryan Afzalian
Summary: Through ab-initio simulation techniques, we investigated the metal contacts for introduction of 2D materials in scaled devices, and found that a low semiconducting-metal contact resistance can be achieved by selecting appropriate 2D metals. We demonstrated that both ohmic or small Schottky barrier top and side contacts can be achieved with a contact resistance below 100 omega mu m. We also performed a screening of possible 2D-3D top contacts and showed that contact resistances below 100 omega mu m can be achieved in certain conditions.
NPJ 2D MATERIALS AND APPLICATIONS
(2023)
Article
Engineering, Electrical & Electronic
Aryan Afzalian, Gerben Doornbos, Tzer-Min Shen, Matthias Passlack, Jeff Wu
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2019)
