Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma

Published 2018 View Full Article

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Title
Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6 plasma
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 51, Issue 18, Pages 185203
Publisher
IOP Publishing
Online
2018-03-22
DOI
10.1088/1361-6463/aab8b7

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