Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

Published 2018 View Full Article

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Title
Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 51, Issue 17, Pages 175101
Publisher
IOP Publishing
Online
2018-03-20
DOI
10.1088/1361-6463/aab7db

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