Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 18, Issue 8, Pages 5654-5659Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2018.15376
Keywords
Ga2O3 Nanostructure; Aqueous Solution; Nitrogen Doped
Categories
Funding
- National Natural Science Foundation of China [11474045, 51102036]
- Fundamental Research Funds for the Central Universities [DC201502080201]
- Program for Liaoning Excellent Scientific and Technological Talents in University [LR2015017]
- Liaoning Provincial Natural Science Foundation of China [201602202]
- Opening Project of State Key Lab of Silicon Materials of Zhejiang University [SKL2014-8]
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Nitrogen doped beta-Ga2O3 nanostructures were synthesized using a simple one-step aqueous approach. The structure and morphology of the nanostructures were characterized. Both the GaOOH precursor and beta-Ga2O3 nanostructures showed the rod-like morphology. Meanwhile, the beta-Ga2O3 nanostructures were doped with nitrogen, which was proved by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and cathodoluminescence (CL). The results showed nitrogen-doped one-dimensional beta-Ga2O3 nanostructures were achieved by in situ doping while maintaining the morphology. Meanwhile, as a straightforward method, the excellent luminescence properties are suitable for application in white-LED phosphors and novel optoelectronic devices.
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