Journal
JOURNAL OF NANOPHOTONICS
Volume 12, Issue 4, Pages -Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.JNP.12.043510
Keywords
AlGaN; ultraviolet light-emitting diodes; light-extraction efficiency
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Funding
- National Key R&D Program of China [2016YFB0400803, 2016YFB0400802]
- National Natural Science Foundation of China [61527814, 61674147, U1505253]
- Beijing Nova Program [Z181100006218007]
- Youth Innovation Promotion Association [CAS 2017157]
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AlGaN-based ultraviolet light-emitting diodes (UV LEDs) are promising next-generation UV sources for a wide variety of applications. The state-of-the-art AlGaN-based UV LEDs exhibit much lower output power and external quantum efficiency than highly commercialized GaN visible LEDs. One key issue for UV LEDs is the poor light-extraction efficiency. We have reviewed the recent progress in the light extraction approaches for AlGaN-based UV LEDs, including the highly reflective techniques, and the surface/interface modification for total internal reflection mitigating. Moreover, AlGaN-based UV LEDs in the nanoscale structures, such as nanopillar, nanorod, and nanowire structures, are also discussed. (C) 2018 Society of Photo Optical Instrumentation Engineers (SPIE)
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