4.4 Article

1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth

Journal

Publisher

SPRINGER
DOI: 10.1007/s10762-018-0471-9

Keywords

Terahertz pulse; Photoconductor; Time domain spectroscopy (TDS); Rare earth

Funding

  1. Deutsche Forschungsgemeinschaft (DFG) [PR1413/3-1]

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ErAs:In(Al)GaAs superlattice photoconductors are grown using molecular beam epitaxy (MBE) with excellent material characteristics for terahertz time-domain spectroscopy (TDS) systems operating at 1550 nm. The transmitter material (Tx) features a record resistivity of 3.85 k Omega cm and record breakdown field strength of 170 +/- 40 kV/cm (dark) and 130 +/- 20 kV/cm (illuminated with 45 mW laser power). Receivers (Rx) with different superlattice structures were fabricated showing very high mobility (775 cm(2)/Vs). The TDS system using these photoconductors features a bandwidth larger than 6.5 THz with a laser power of 45 mW at Tx and 16 mW at Rx.

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