Journal
JOURNAL OF COLLOID AND INTERFACE SCIENCE
Volume 510, Issue -, Pages 376-383Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2017.09.080
Keywords
Light-emitting diodes; Quantum dots; Type II; Quantum yields
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Funding
- Natural Science Foundation of China [11564026, 11774141, 61366003]
- State Scholarship Fund [201608360030]
- Natural Science Foundation of Jiangxi Province [20151BAB212001, 20151BBE50114, 20171BAB202036, 20161BAB212035]
- Outstanding Youth Funds of Jiangxi Province [20171BCB23051, 20171BCB23052]
- Science and Technology Project of the Education Department of Jiangxi Province, China [0150727, GJJ160681]
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Type-II quantum dots (QDs) are emerging as a promising candidate for full color light sources owing to their advantages in achieving full color light by tuning the heterostructures. Despite the recent developments in type-II QDs, the choices of proper materials are limited for the composition of a high-quality QD and it still remains a big challenge to enhance the photoluminescence (PL) quantum yields (QYs) of type II QDs for light-emitting diode (LED) applications. Here, we develop Cd xZn1-xS/ZnSegnS type-II QDs with a maximum quantum yield as high as 88.5%. Time-resolved PL results show that the ZnS shell suppresses non-radiative pathways by passivating the surface of CdxZn1-xSiZnSe, thus leading to a high QY. Moreover, our results demonstrate that the outer ZnS also benefits the charge injection and radiative recombinations of the Cd xZn1-xS/ZnSe. The LED based on green Cd0.2Zn0.8S/ZnSeanS QDs achieves a current efficiency (CE) of 9.17 cd A(-1), an external quantum efficiency (EQE) of 8.78% and a low turn-on voltage of similar to 2.3 V. (C) 2017 Elsevier Inc. All rights reserved.
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