Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Current-mode deep level transient spectroscopy of a semiconductor nanowire field-effect transistor

(2017) Ivan Isakov et al.   JOURNAL OF APPLIED PHYSICS

Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps

(2017) N. Chinone et al.   JOURNAL OF APPLIED PHYSICS

Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics

(2017) Stanislau B. Lastovskii et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Theory of a carbon-oxygen-hydrogen recombination center in n-type Si

(2017) Paulo Santos et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

The di-interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

(2017) Vasilii E. Gusakov et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon

(2017) M. Vaqueiro-Contreras et al.   Physica Status Solidi-Rapid Research Letters

Tutorial: Defects in semiconductors—Combining experiment and theory

(2016) Audrius Alkauskas et al.   JOURNAL OF APPLIED PHYSICS

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

(2015) H. M. Ayedh et al.   APPLIED PHYSICS LETTERS

Comparing LDA-1/2, HSE03, HSE06 andG0W0approaches for band gap calculations of alloys

(2015) R R Pela et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

(2015) A. Sasikumar et al.   MICROELECTRONICS RELIABILITY

Density functional theory: Its origins, rise to prominence, and future

(2015) R. O. Jones   REVIEWS OF MODERN PHYSICS

Review—Characterization of Metal-Contamination Effects in Silicon

(2015) M. L. Polignano et al.   ECS Journal of Solid State Science and Technology

Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

(2014) Andrew M. Armstrong et al.   Applied Physics Express

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

(2014) Marcel A. Py et al.   PHYSICAL REVIEW B

First-principles theory of nonradiative carrier capture via multiphonon emission

(2014) Audrius Alkauskas et al.   PHYSICAL REVIEW B

Electrostatics-based finite-size corrections for first-principles point defect calculations

(2014) Yu Kumagai et al.   PHYSICAL REVIEW B

Finite-size supercell correction schemes for charged defect calculations

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Ab initioCalculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors

(2012) Lin Shi et al.   PHYSICAL REVIEW LETTERS

Laplace deep level transient spectroscopy: Embodiment and evolution

(2011) A.R. Peaker et al.   PHYSICA B-CONDENSED MATTER

Scanning tip measurement for identification of point defects

(2011) Laszlo Dozsa et al.   Nanoscale Research Letters

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS