Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 734, Issue -, Pages 243-249Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.11.014
Keywords
Electrical properties; Sol-gel method; Thin films; Zn doping
Categories
Funding
- Research Fund for the Doctoral Program of Shandong Jianzhu University [XNBS1626]
- Project of Shandong Province Higher Educational Science and Technology Program [J15LA05]
- National Natural Science Foundation of China [51272142, 51672198]
- Instruction & Development Project for National Funding Innovation Demonstration Zone of Shandong Province [2016-181-11, 2017-41-1, 2017-41-3]
- Primary Research Plan of Shandong Provence [2016CYJS07A03-2]
- National Torch Program of China [2015GH511363]
- Innovative Public Service Platform Special Plan of Shandong [2014CXPT002]
- Central Guiding Local Science and Technology Development Special Funds [2060503]
- Science and Technology Development Plan of Zibo [2016kj100097]
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BiFe1-xZnxO3 (BFZO) (x = 0%, 1%, 2%, 3%) films were deposited on ITO/glass substrates by sol-gel method. We systematically investigated the influence of Zn doping on the crystal microstructure, leakage current, conduction mechanism and ferroelectric behavior of BFZO films. From the XRD patterns, all samples match well with the perovskite structure without impurity phase. Large remnant polarization (2P(r) = 129.6 mu C/cm(2)), low coercive field (2E(c) = 904 kV/cm) at measured electric field value of 1000 kV/cm were obtained from the BFZO films with x = 2%. Leakage current density curves shows that Zn doping can significantly decrease the leakage current of BFO film in low electric field. In addition, the leakage conduction mechanism transforms from the Ohmic conduction under the low electric field to the F-N tunneling effect under high electric field. (C) 2017 Elsevier B.V. All rights reserved.
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