Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer

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Title
Separation of effects of InGaN/GaN superlattice on performance of light-emitting diodes using mid-temperature-grown GaN layer
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 6, Pages 062101
Publisher
Japan Society of Applied Physics
Online
2018-04-26
DOI
10.7567/jjap.57.062101

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