Journal
INORGANIC MATERIALS
Volume 54, Issue 2, Pages 133-139Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0020168518020152
Keywords
zirconium diboride; boron carbonitride; thin films; multilayer structures; chemical vapor deposition process; thermodynamic modeling
Categories
Funding
- Russian Foundation for Basic Research [16-33-00448 mol_a]
Ask authors/readers for more resources
Using mechanochemical synthesis, we have prepared zirconium borohydride, Zr(BH4)(4), as a precursor for ZrB2 film growth by chemical vapor deposition. We have carried out the thermodynamic modeling of phase formation processes in the Zr-B-(N)-H and Zr-B-(N)-H-O systems in a wide temperature range, from 100 to 2500A degrees C, at various p ((H2))/p ((Zr(BH4)4)) and p ((NH3))/p ((Zr(BH4)4)) partial pressure ratios in the starting gas mixtures. A process has been proposed for the growth of zirconium diboride films by Zr(BH4)(4) decomposition using two techniques: chemical vapor deposition and plasma-enhanced chemical vapor deposition. We also developed a process for the growth of multilayer ZrB2-and BC (x) N (y) -based structures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available