Article
Nanoscience & Nanotechnology
Dongying Li, Yueyang Yu, Cun-Zheng Ning
Summary: This study successfully prepared high-quality stable few-layer black phosphorus samples through a specific strategy, leading to significant enhancements in photoluminescence and optical properties, which could potentially unlock new possibilities for photonics applications.
ACS APPLIED NANO MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Dong Li, Yonggang Zheng, Hongwu Zhang, Hongfei Ye
Summary: This study investigates the bending behaviors of vertically-stacked black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures using molecular dynamics simulation. It finds that the bending stiffness of BP/MoS2 varies with the bending angle and a self-bending configuration induced by lattice mismatch and size difference can be observed. The size difference also weakens the bending stiffness by reducing interlayer interaction. A prediction formula is proposed to evaluate the bending stiffness of BP/MoS2. This finding provides a novel way to regulate the bending properties of 2D heterostructures and design flexible devices with tunable bending performance.
Article
Materials Science, Composites
Jingkai Liu, Yishun Wuliu, Xinbei Zhu, Liyue Zhang, Jinyue Dai, Xiaoqing Liu
Summary: In this work, an acrylate monomer passivation strategy was proposed to retain the intrinsic properties of photosensitive black phosphorus nanosheets for high photothermal conversion efficiency. A flame-retardant acrylate was synthesized to crosslink with the nanosheets and improve fire resistance. The resulting composite showed high photothermal conversion efficiency and improved safety for application.
COMPOSITES SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Dong-Hyun Wang, Sung-Su Yoon, Ja-Yun Ku, Dae-Han Jung, Khwang-Sun Lee, Dongho Kim, Jun-Young Park
Summary: Ionizing radiation generates traps in the gate dielectric, causing undesired effects on threshold voltage shifting, subthreshold swing, and gate leakage current. This study proposes low-deuterium annealing as an alternative to conventional annealing to minimize thermal budget side effects. The effectiveness of low-deuterium annealing in curing gate dielectric damage caused by fabrication processing and ionizing radiation is demonstrated. It is shown that operating deuterium annealing under low-temperature conditions can improve device performance, reliability, and device-to-device variability.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2023)
Article
Engineering, Electrical & Electronic
Hao Wu, Xiaojun Fu, Jingwei Guo, Tao Liu, Yuan Wang, Jun Luo, Zhiyong Huang, Shengdong Hu
Summary: The research investigated the total ionizing dose and annealing effects on Schottky type p-GaN gate Al0.2Ga0.8N/GaN HEMTs. It was found that the threshold voltage shifts are caused by the accumulation of positive charges at the interface of p-GaN/AlGaN. After performing both high temperature and room temperature annealing processes, the shifted threshold voltage recovered, with high temperature accelerating the recovery process. Experiment results suggest that the total ionizing dose effect is recoverable.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
S. Amor, V. Kilchytska, F. Tounsi, N. Andre, M. Machhout, L. A. Francis, D. Flandre
Summary: This paper demonstrates a procedure for complete in-situ recovery of on-membrane CMOS devices from total ionizing dose (TID) defects induced by gamma radiation. The procedure involves annealing steps using an integrated micro-heater, and the electrical characteristics of the devices are recorded throughout the process. The results show that the devices' characteristics are completely recovered after annealing.
SOLID-STATE ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
X. Z. Cai, Y. Q. Chen, C. J. Zhou
Summary: This article investigates the effects of total ionizing dose (TID) irradiation and annealing treatment on the degradation of commercial Cascode GaN high-electron-mobility transistors (HEMTs). The study uses low frequency noise method (LFN) to analyze defects. TID irradiation leads to a negative drift of threshold voltage and an increase of drain-source current, as well as changes in off-state drain leakage current and drain-source resistance. Annealing treatment partially restores certain characteristics of the devices but has no significant influence on gate-lag characteristics and drain-source resistance. The trap density decreases after TID irradiation.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Physical
Gizem Yanalak, Zafer Eroglu, Seda Yilmaz, Salih Zeki Bas, Onder Metin, Imren Hatay Patir
Summary: Recently, 2D semiconductor-based heterojunctions have attracted intensive research attention due to their unique properties. In this study, Ni or Co-doped black phosphorus/molybdenum disulfide (BP/MoS2-Y) heterojunctions were fabricated for photocatalytic H2 evolution and electrochemical nitrite sensing. The BP/MoS2-Ni and BP/MoS2-Co heterojunctions showed enhanced H2 performance compared to BP/MoS2. Moreover, BP/MoS2-Co was used as an electrocatalyst for the detection of nitrite, and its sensing performance was optimized through various conditions. The study provides opportunities for hydrogen systems and electrochemical sensor applications.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2023)
Article
Engineering, Environmental
Yaqi Wang, Jiakun Wu, Yu Yan, Lu Li, Ping Lu, Jiunian Guan, Nan Lu, Xing Yuan
Summary: A novel method combining ball-milling with hydro-thermal was reported for fabricating a TiO2-BiVO4-BP/RP film, which exhibited enhanced photoelectrocatalytic activity towards degrading a fluorinated fungicide. The face-to-face contact between BiVO4 and BP, as well as the synergistic effects of the multi-heterojunctions, played key roles in promoting electron transfer and enhancing radical generation. The BP/RP in situ junction contributed to the superior performance of the catalyst in comparison with other phosphonene-based catalysts, leading to excellent stability and recyclability in the removal of fluorinated organic pollutants in wastewater.
CHEMICAL ENGINEERING JOURNAL
(2021)
Article
Chemistry, Physical
Gizem Yanalak, Fatmanur Doganay, Zafer Eroglu, Huseyin Kucukkececi, Emre Aslan, Mustafa Ozmen, Salih Zeki Bas, Onder Metin, Imren Hatay Patir
Summary: The novel ternary nanocomposite of mpg-CN/BP-Au shows excellent catalytic performance in the photocatalytic hydrogen evolution reaction and electrochemical detection of paracetamol, potentially paving the way for various photo- and electrochemical applications.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Segolene Dinand, Olivier Gravrand, Eric de Borniol, Nicolas Baier, Serena Rizzolo, Olivier Saint-Pe, Cedric Virmontois, Vincent Goiffon
Summary: This study presents the investigation of the performance degradation of multipixel-designed mid-wavelength infrared HgCdTe focal plane arrays under irradiation. The effects of total ionizing dose (TID) and displacement damage dose (DDD) are separately analyzed through gamma and proton irradiations. The results show that TID damages the silicon read-out integrated circuit (ROIC), leading to low current level and random telegraph signal (RTS) phenomenon. DDD affects the HgCdTe photodetection layer, increasing the number of pixels with high dark current and RTS in the array. The amount of DDD-induced degradation is influenced by the photodiode size and applied bias, indicating the location of defects in the HgCdTe depletion region.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Yuan Gao, Kai Lu, Yongwei Chang, Zhongying Xue, Xing Wei
Summary: This article explores the impact of total ionizing dose on DSOI nMOSFETs and finds that negative back-gate bias can effectively mitigate TID-induced performance degradation. The application of DSOI technology in high-radiation-dose conditions will benefit from this research.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Jeffrey Prinzie, Stefan Biereigel, Szymon Kulis, Pedro Leitao, Paulo Moreira
Summary: This article presents a radiation tolerant charge-pump phase-locked loop (PLL) with low static phase error variability suitable for high-performance clock systems in high-dose radiation environments. The circuit uses source switching charge-pump architectures to minimize voltage- or dose-dependent charge injection and addresses the limitations of enclosed layout transistors (ELTs) in conventional drain switched charge-pumps. The experimental results show that the circuit, processed in a 65-nm CMOS technology, can withstand X-rays up to a total ionizing dose of 180 Mrad.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Zhendong Chen, Tianyu Liu, Duo Pan, Yonggang Wang, Yajun Li, Jianjun Wu
Summary: In this study, black phosphorus was successfully doped into sol-gel glass, providing a practical solution to stabilize black phosphorus in the air. The BP-doped sol-gel glass showed excellent chemical stability and high optical damage threshold, making it suitable for applications such as Q-switching and mode-locking.
IEEE PHOTONICS JOURNAL
(2023)
Article
Thermodynamics
Huadong Huang, Shiquan Shan, Zhijun Zhou
Summary: The study found that the BP/hBN heterostructure with high electron density has a higher heat transfer coefficient at a 10 nm gap due to the coupling of surface plasmon polaritons and hyperbolic phonon polaritons. Thicker hBN sheets can further enhance the heat transfer, while optimized structures improve the heat transfer efficiency for both low and high electron density. Additionally, the BP/hBN/BP heterostructure can further enhance the heat transfer.
NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING
(2023)
Article
Materials Science, Multidisciplinary
Xin Jin, Andrew O'Hara, Yu-Yang Zhang, Shixuan Du, Sokrates T. Pantelides
Summary: This study presents a theoretical prediction for electric-field control of nanoscale magnetic states and verifies its effectiveness through calculations on specific material choices. The method utilizes a heterostructure consisting of a two-dimensional ferroelectric material and a polar magnetic metal with strong spin-orbit coupling to achieve strong magnetoelectric coupling and electric-field control of skyrmions.
Article
Chemistry, Multidisciplinary
Eric R. R. Hoglund, De-Liang Bao, Andrew O'Hara, Thomas W. W. Pfeifer, Md Shafkat Bin Hoque, Sara Makarem, James M. M. Howe, Sokrates T. T. Pantelides, Patrick E. E. Hopkins, Jordan A. A. Hachtel
Summary: Grain boundaries are a common microstructural feature that greatly influence the functionality of various materials. Extensive experimental and theoretical studies have been conducted to understand the correlation between atomic-scale grain boundary structures and macroscopic properties. In this study, a SrTiO3 grain boundary was examined using advanced microscopy and spectroscopy techniques, along with density functional theory. The results provide insights into the impact of individual boundaries on macroscopic properties through the analysis of localized grain boundary vibrations.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Xuyi Luo, En Xia Zhang, Peng Fei Wang, Kan Li, Dimitri Linten, Jerome Mitard, Robert A. A. Reed, Daniel M. M. Fleetwood, Ronald D. D. Schrimpf
Summary: Negative bias-temperature instabilities and low-frequency noise are investigated in strained Ge pMOS FinFETs with SiO2/HfO2 gate dielectrics. The extracted activation energies for NBTI in Ge pMOS FinFETs are smaller than for Si p MOSFETs. Low-frequency noise magnitudes at lower temperatures are unaffected by negative-bias-temperature stress (NBTS), but increase significantly for temperatures above similar to 230 K. The increased noise due to NBTS is attributed primarily to the activation of oxygen vacancies and hydrogen-related defects in the SiO2 and HfO2 layers.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2023)
Article
Engineering, Electrical & Electronic
Arijit Sengupta, Dennis R. Ball, Arthur F. Witulski, En Xia Zhang, Ronald D. Schrimpf, Kenneth F. Galloway, Robert A. Reed, Michael L. Alles, Michael W. McCurdy, Andrew L. Sternberg, Robert A. Johnson III, Mick E. Howell, Jason M. Osheroff, John M. Hutson
Summary: Experimental results show that silicon carbide junction barrier Schottky diodes exhibit different responses to heavy-ion irradiation. When heavy ions have a range less than the epitaxial layer thickness, no degradation or catastrophic failure is observed, even with high biases. However, when heavy ions have a range longer than the epitaxial layer thickness, the devices exhibit degradation as single-event leakage current (SELC) and catastrophic single-event burnout (SEB) at lower biases. Failure occurs when irradiated with high-energy ions but not with low-energy ions that stop in the epitaxial layer. The mechanisms of these heavy-ion effects are examined using technology computer-aided design (TCAD) device modeling.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Shintaro Toguchi, En Xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Stephane Moreau, Perrine Batude, Laurent Brunet, Francois Andrieu, Michael L. Alles
Summary: The total-ionizing-dose (TID) responses of fully depleted silicon-on-insulator (FDSOI) ring oscillators (ROs) in 3-D architectures were investigated. After irradiation, the operational frequencies of these devices decrease due to threshold voltage shifts and transconductance degradation in the pull-up p-MOSFETs caused by interface-trap buildup. Among the 3-D sequentially integrated FDSOI ROs, those fabricated in the bottom layer show the most significant frequency degradation. AC-bias irradiation causes greater shifts than static-bias irradiation due to enhanced interface-trap buildup. Circuit simulations confirm the significant impact of transconductance degradation in pull-up p-MOSFETs on the TID response of these ROs.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Jaesung Lee, Michael W. McCurdy, Robert A. Reed, Ronald D. Schrimpf, Michael A. Alles, Philip X. -L. Feng
Summary: We report on the in situ measurement of proton radiation effects on single-crystal silicon comb-drive resonant MEMS devices. The resonators exhibit highly sensitive responses in resonance characteristics while maintaining robust operations. Based on the TRIM simulations, the observed radiation effects on resonance frequency could be attributed to a combination of ionizing and displacement damage effects. These in situ observations of radiation effects on comb-drive MEMS resonators show the promising potential of dynamic MEMS for new types of radiation sensors or radiation-hardened signal processing components.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
R. M. Cadena, D. R. Ball, E. X. Zhang, S. Islam, A. Senarath, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O'Hara, B. R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, R. D. Schrimpf
Summary: Low-energy ion-induced breakdown and single event burnout (SEB) were observed in beta-gallium oxide (beta-Ga2O3) Schottky diodes at voltages lower than expected. Different responses were observed for alpha particles, Cf-252, and heavy-ion irradiation. TCAD simulations explained the breakdown as a result of ion strikes and defect-driven breakdown due to displacement-damage-induced defects in beta-Ga2O3. First-principles calculations showed the formation of less resistive defect clusters that can lead to destruction at reduced voltages.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Mariia Gorchichko, En Xia Zhang, Mahmud Reaz, Kan Li, Peng Fei Wang, Jingchen Cao, Rachel M. Brewer, Ronald D. Schrimpf, Robert A. Reed, Brian D. Sierawski, Michael L. Alles, Jonathan Cox, Steven L. Moran, Subramanian S. Iyer, Daniel M. Fleetwood
Summary: The effects of programming/erasing (P/E) and total-ionizing dose (TID) on 2-and 40-fin charge-trap transistors (CTTs) fabricated in a 14-nm bulk-Si CMOS technology are investigated. Significant random telegraph noise (RTN) is observed in as-processed CTTs, especially for 2-fin devices. Trapped charge in programmed devices does not significantly affect 1/f noise magnitudes, but P/E leads to trap activation/deactivation, causing changes in border-trap energy and spatial distributions. TID irradiation activates a large number of stable radiation-induced traps.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Robert A. Johnson III, Arthur F. Witulski, Brian D. Sierawski, Dennis R. Ball, Kenneth F. Galloway, Andrew L. Sternberg, Robert A. Reed, Ronald D. Schrimpf, Michael L. Alles, Jean-Marie Lauenstein, John M. Hutson
Summary: Silicon carbide (SiC) power devices may experience significant step increases in leakage current under heavy ion irradiation in the OFF state. This article employs the PSYCHIC code to generate potential environmental flux spectra and characterizes leakage current increases during broad-beam irradiation. The results show that shielding thickness and operating voltage have a significant impact on the potential cumulative leakage current increase.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
M. D. Hu, F. Padgett III, M. W. McCurdy, B. D. Sierawski, R. D. Schrimpf, R. A. Reed, M. L. Alles
Summary: The single-event response of a three-layer heterogeneously integrated commercial off-the-shelf (COTS) CMOS image sensor (CIS) to alpha particles of different energies is analyzed. The differences in the single-event response of the device-under-test (DUT) depend on the energy of the alpha particles. The peripheral circuitry of the dynamic random-access memory (DRAM) layer is susceptible to single-event functional interrupts (SEFIs), and the on-chip demosaicing algorithm significantly affects the number of affected pixels by transient-ionizing events.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Physics, Applied
Chappel S. Thornton, Xiao Shen, Blair Tuttle, Xuebin Li, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones
Summary: This paper investigates the diffusion and electrical activation of phosphorus in Si1-xGex during oxidation. The study reveals that phosphorus mainly diffuses to the SiGe-SiO2 interface and is electrically inactive at the interface. Through a combination of experiments and density functional theory calculations, it is proposed that Ge interstitials generated during SiGe oxidation drive the displacement of phosphorus atoms and a novel hopping mechanism of P-Ge split interstitials.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Songge Li, Yun-Peng Wang, Shoucong Ning, Kai Xu, Sokrates T. Pantelides, Wu Zhou, Junhao Lin
Summary: A single-frame scanning transmission electron microscopy (STEM) image can be used to reconstruct the ripple structure in monolayer MoSe2, allowing for direct visualization of the dynamics of three-dimensional ripple deformation at the atomic scale. Furthermore, the reconstructed images provide an opportunity to test the validity of the classical theory of thermal fluctuations.
Article
Chemistry, Physical
Mingquan Xu, De-Liang Bao, Aowen Li, Meng Gao, Dongqian Meng, Ang Li, Shixuan Du, Gang Su, Stephen J. Pennycook, Sokrates T. Pantelides, Wu Zhou
Summary: By improving the stability and sensitivity of the instrument, we have successfully observed the specific vibrational signals between substitutional impurities and neighboring carbon atoms in monolayer graphene. This work allows for the direct observation of local phonon modes with chemical-bonding sensitivity, providing more insights into defect-induced physics in graphene.
