Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 10, Pages 4122-4128Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2848235
Keywords
Black phosphorus (BP); contact; hydrogenation; inverter; nanoribbon; phosphorene; transistor
Funding
- A*STAR Science and Engineering Research Council [152-70-00013]
- National Research Foundation, Prime Minister's Office, Singapore through the Medium-Sized Centre Program
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This paper demonstrates a high-performance black phosphorus nanoribbons field-effect transistor (BPNR-FET) and systematically investigates methods for enhancing its anisotropic carrier transport. The BPNR-FET shows a strong dependence on crystal orientation in which the best mobility performance is achieved in armchairoriented nanoribbons. A downscaling of nanoribbon width is shown to improve the short-channel effect owing to a better electrostatic gate control. Furthermore, hydrogenation is employed to effectively passivate the dangling bonds and heal the nanoribbon edge defects, leading to nearly hysteresis-free transfer properties. By virtue of bandgap and contact-metal workfunction engineering, n-type BPNR-FET is successfully demonstrated, which enables complementary inverter circuits to be simultaneously realized. This paper unravels the superior performance underscores a conceptually new BPNR-FET, paving the way toward the development of non-planar devices and integrated circuits based on 2-D materials platform.
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