Article
Engineering, Electrical & Electronic
Ankit Verma, V. N. Mishra, Rajiv Prakash
Summary: In this article, a self-aligned, cost-efficient, fully solution-processed, and low-voltage operated high-k dielectric-based p-channel organic thin-film transistor (OTFT) has been developed and investigated for toxic ammonia analyte at room temperature. The study reveals that this novel low-voltage OTFT device is capable of operating at -2 V and has shown a high sensitivity toward ammonia gas detection at RT.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Ankit Verma, V. N. Mishra, Rajiv Prakash
Summary: In this study, a self-aligned, cost-efficient, fully solution-processed, and low-voltage operated high-k dielectric-based p-channel organic thin-film transistor (OTFT) was developed for toxic ammonia analyte detection at room temperature. The OTFT sensor showed a high response rate of 47% at 5 ppm NH3 analyte and a low detection limit of 11.65 ppb. The developed sensor exhibited stable performance independent of relative humidity variations in the range of 30%-70%. The study demonstrates the capability of this novel low-voltage OTFT device to detect ammonia gas at room temperature.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Ankit Verma, Shipra Gupta, V. N. Mishra, Rajiv Prakash
Summary: This study focuses on the fabrication and characterization of a low-voltage, flexible organic thin film transistor (OTFT) for ammonia sensing. The device utilizes a hybrid dielectric layer and a polymer/2-D nanocomposite as the gate oxide and active layer respectively. The results show that the fabricated device has good electrical characteristics and can detect ammonia gas at low concentrations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Fiheon Imroze, Mithun Chennamkulam Ajith, Parthasarathy Venkatakrishnan, Soumya Dutta
Summary: The solution-processed inverted co-planar organic thin film transistor with recessed source-drain-gate and polymer gate dielectric demonstrates a fully recessed device. The study thoroughly investigates the impact of recessed electrodes on contact resistance and mobility.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Physical
Junhwan Choi, Min Ju Kim, Joo-Young Kim, Eun Kyung Lee, Changhyeon Lee, Youngkeun Park, Juyeon Kang, Jeong-Il Park, Byung Jin Cho, Sung Gap Im
Summary: The electrical characteristics of organic thin-film transistors (OTFTs) are analyzed based on the alkyl chain length of organic semiconductors and surface polarity of polymer dielectrics in this study. It is found that the OTFT performance can be improved by increasing the alkyl chain length in organic semiconductors, while the non-polar dielectric layer can enhance the charge transport characteristics.
Article
Engineering, Electrical & Electronic
Yu-Fa Tu, Jen-Wei Huang, Ting-Chang Chang, Yang-Hao Hung, I-Nien Lu, Kuan-Ju Zhou, Li-Chuan Sun, Yu-An Chen, Chia-Chuan Wu, Wei-Chieh Hung, Jason Lee, Chen-Hsin Lien
Summary: This study investigates the electrical mechanisms of the organic thin-film transistor (OTFT) with an asymmetric U-I electrode structure under hot-carrier stress (HCS). The threshold voltage shifts negatively and a dual-channel phenomenon occurs. The degradation behaviors of the linear and saturated I-D-V-G transfer curves are different. These are attributed to the non-uniform electric-field and heat distribution, which results in the non-uniform trapped holes in the organic-gate insulator-1 by charge trapping model during HCS. Finally, physical mechanisms based on COMSOL simulations and energy bands are proposed to clarify the degradation phenomena.
IEEE ELECTRON DEVICE LETTERS
(2023)
Review
Engineering, Electrical & Electronic
Xin Ma, Hongquan Chen, Peiwen Zhang, Martin C. Hartel, Xiaona Cao, Sibel Emir Diltemiz, Qinglei Zhang, Javed Iqbal, Natan Roberto de Barros, Liyan Liu, Hao Liu
Summary: This paper describes the working principles of OTFT, including OFET and OECT, and compares the differences between them. It also discusses the potential for OTFT in biomarker sensing applications and improving patient outcomes.
IEEE SENSORS JOURNAL
(2022)
Article
Chemistry, Physical
Bochang Li, P. T. Lai, W. M. Tang
Summary: The channel length has an impact on the sensing performance of the hydrogen sensor based on OTFT, with smaller channel lengths resulting in lower carrier mobility. The compressive strain in the channel region increases with decreasing channel length, leading to a larger reduction in carrier mobility and higher sensitivity to hydrogen caused by hydrogen-induced expansion of the S/D electrodes. Furthermore, the response and recovery times of the sensor are mainly controlled by the diffusion of hydrogen atoms in the S/D electrodes, and are hardly affected by the channel length.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2021)
Article
Materials Science, Multidisciplinary
Sungmi Yoo, Dong-Gyun Kim, Hyunjin Park, Jinha Ha, Jinsoo Kim, Jong Chan Won, Yun Ho Kim
Summary: A solution-processable and photocurable polyurea (PU) with excellent electrical and dielectric properties is synthesized and applied as a gate dielectric in high-performance organic thin-film transistors (OTFTs). The photo-crosslinked PU film improves dielectric properties and thermal and chemical resistance compared with pristine PU films. The performance of the c-PU thin film as a gate dielectric is demonstrated in DNTT-based and diketopyrrolopyrrole-thienothiophene copolymer-based OTFTs.
MATERIALS RESEARCH BULLETIN
(2023)
Article
Engineering, Electrical & Electronic
Shizhang Li, Dehui Li, Weihao Qi, Meili Xu, Wei Wang
Summary: By utilizing an elaborately constructed tri-layer gate dielectric, OTFTs achieved both low-voltage operation and high mobility, demonstrating promising performances with mobility exceeding 10 cm(2)/vs and high on/off ratio of 10^5 at operating voltages below 5 V. Measurements on stability and aging indicated the necessity of encapsulation for practical application.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
S-J Wang, M. Sawatzki, H. Kleemann, I Lashkov, D. Wolf, A. Lubk, F. Talnack, S. Mannsfeld, Y. Krupskaya, B. Buechner, K. Leo
Summary: Rubrene single crystal domains with hundreds of micrometers size covering different substrates are achieved by thermal annealing and the assistance of a thin glassy underlayer, enabling high-performance rubrene crystalline transistors. The contact resistance of the transistors is significantly reduced through doping techniques, paving the way for novel high-performance organic electronics using crystalline active materials.
MATERIALS TODAY PHYSICS
(2021)
Article
Chemistry, Physical
Zhihao Liang, Weijing Wu, Xiao Fu, Honglong Ning, Wei Xu, Xin Xiong, Tian Qiu, Cheng Luo, Rihui Yao, Junbiao Peng
Summary: In this study, a flexible dielectric layer was prepared by combining HfMgTiYZrOx high-entropy metal oxide and poly(vinyl alcohol) (PVA) organic material. The fabricated metal-insulator-metal (MIM) and TFT devices showed good performance in flexible tests, with low leakage current and high transparency. These findings suggest that high-entropy PVA hybrid films have great potential for applications in transparent and flexible devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Yachen Li, Luis Portilla, Chaewon Kim
Summary: The intrinsic gain is a key metric in analog electronics, and research shows that it does not have much correlation with the mobility and contact resistance, but decreases as the channel length decreases, the gate voltage increases, and the thickness of the active layer decreases.
ELECTRONIC MATERIALS LETTERS
(2021)
Article
Chemistry, Physical
Chuan Yu Han, Wing Man Tang, Pui-To Lai
Summary: By using high-k gate dielectric and metal gate, pentacene organic thin-film transistors achieved very high carrier mobility on both rigid and flexible substrates. The high-k gate dielectric with suitable thickness can reduce surface-roughness scattering, while the metal gate can suppress remote phonon scattering. Adding a 13-nm SiO2 interlayer between the NbLaO gate dielectric and metal gate electrode led to decreased carrier mobility on Si and V.T. substrates, emphasizing the importance of the process.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
R. Nirosha, Rajesh Agarwal
Summary: This study presents a comparative analysis of the performance of a p-type organic thin-film transistor for temperature sensing using organic and inorganic dielectrics. The findings suggest that high-k dielectric demonstrates optimum performance with a low subthreshold slope, high ON/OFF ratio, low contact resistance, and linear decrease in threshold voltage with increasing temperature. The study emphasizes the importance of the ON/OFF ratio, threshold voltage, and subthreshold slope in determining the performance of the sensors.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
X. D. Huang, Y. Ma, J. Q. Song, P. T. Lai, W. M. Tang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2018)
Article
Physics, Applied
Sheng Li Fang, Wei Hua Liu, Xin Li, Xiao Li Wang, Li Geng, Min Shun Wu, Xiao Dong Huang, Chuan Yu Han
APPLIED PHYSICS LETTERS
(2019)
Article
Engineering, Electrical & Electronic
Chuan Yu Han, Zhi Xing Zhang, Wei Hua Liu, Xin Li, Li Geng, Leizhi Wang, Xiao Li Wang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Chuan Yu Han, P. T. Lai, Wing Man Tang
Summary: High-performance pentacene organic thin-film transistors with Hf-0.13 La0.87O gate dielectric and Pd gate electrode show high carrier mobility on both Si and PI substrates, with good stability after exposure to air for 30 days without encapsulation.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Menghua Wang, Mingchao Yang, Weihua Liu, Jinwei Qi, Songquan Yang, Chuanyu Han, Li Geng, Yue Hao
Summary: The novel post-oxidation annealing process with supercritical N2O fluid effectively enhances the interface properties of SiO2/4H-SiC systems, showing great potential for improving the performance of SiC power MOSFET devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Materials Science, Multidisciplinary
Chuan Yu Han, Yijun Li, Zhi Xing Zhang, Wei Hua Liu, Xin Li, Xiaoqing Guo, Jun Wan, Guo He Zhang, Xiao Li Wang, Qiao Lin
Summary: This work introduces an artificial synapse based on side-gate graphene-field-effect-transistor, successfully emulating various synaptic plasticities and behaviors. The model proposed, based on a widely used function for biological synapses, effectively describes the behavior of the fabricated artificial synapses.
ORGANIC ELECTRONICS
(2021)
Article
Nanoscience & Nanotechnology
Sheng Li Fang, Chuan Yu Han, Wei Hua Liu, Xin Li, Xiao Li Wang, Xiao Dong Huang, Jun Wan, Shi Quan Fan, Guo He Zhang, Li Geng
Summary: This work achieved multilevel resistive random access memories (RRAMs) with multiple stable resistance states, attributing the resistive switching mechanism to conductive filament and redox reaction. By utilizing RRAM, a tunable high-pass filter with configurable filtering characteristics was realized, demonstrating high resolution and wide programming range.
Article
Chemistry, Multidisciplinary
Chuan Yu Han, Zheng Rong Han, Sheng Li Fang, Shi Quan Fan, Jun Qing Yin, Wei Hua Liu, Xin Li, Shi Qiang Yang, Guo He Zhang, Xiao Li Wang, Li Geng
Summary: In this study, high-performance VO2 Mott memristors were fabricated on flexible substrates, and their electrical properties were well modeled. A flexible artificial spiking warm receptor was created using this memristor, and the effects of its electrical properties on the spiking frequency were thoroughly studied, demonstrating response characteristics similar to biological warm receptors.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Jiang Liu, Chuanyu Han, Mingchao Yang, Weihua Liu, Li Geng, Yue Hao
Summary: This study successfully fabricated high-performance GaN vertical Schottky barrier diodes and demonstrated the potential of the self-alignment trench structure in improving the breakdown voltage.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Jiang Liu, Chuanyu Han, Weihua Liu, Li Geng, Yue Hao
Summary: This work presents a method to fabricate quasi-vertical GaN Schottky barrier diodes on sapphire substrates with oxygen plasma treatment. The fabricated diodes exhibit high ON/OFF current ratio and low leakage current density, as well as high breakdown voltage. The oxygen plasma treatment removes photoresist residue and improves the barrier height of the anode electrode, leading to lower leakage current and higher breakdown voltage. This work provides a good process for practical applications of GaN on foreign substrates in high power electronics.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Chuan Yu Han, Sheng Li Fang, Yi Lin Cui, Weihua Liu, Shi Quan Fan, Xiao Dong Huang, Xin Li, Xiao Li Wang, Guo He Zhang, Wing Man Tang, P. T. Lai, Jia Liu, Xianjie Wan, Zhou Yu, Li Geng
Summary: For the first time, a configurable NbOx memristor is achieved that can be configured as an artificial synapse or neuron after fabrication by controlling the forming compliance current (FCC). When the FCC = 2 mA, the memristors exhibit the resistive-switching (RS) property, enabling multiple types of synaptic plasticity, including short-term potentiation, paired-pulse facilitation, short-term memory, and long-term memory. When the FCC = 3 mA, the memristors can be electroformed and exhibit the threshold switching (TS) property with excellent endurance (>10(12)), thus achieving various biological neuron characteristics, such as threshold-triggering, strength-modulation of spike frequency, and leaky integrate-and-fire. This enables the successful implementation of a spiking Pavlov's dog that employs the spikes as information carrier by connecting an RS NbOx memristor as artificial synapse and a TS memristor as artificial neuron in series. Furthermore, a fully NbOx memristors-based single-layer spiking neural network is simulated. It is first found that, due to the forgetting property of synapse, the recognition accuracy for the Modified National Institute of Standards and Technology handwritten digits is increased from 85.49% to 91.45%. This study provides a solid foundation for the development of neuromorphic machines based on the principles of the human brain.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Yubin Yuan, Runyu Gao, Qiang Wu, Shengli Fang, Xiangrui Bu, Yilin Cui, Chuanyu Han, Long Hu, Xin Li, Xiaoli Wang, Li Geng, Weihua Liu
Summary: This article introduces an artificial spiking sensory neuron based on a NbO(x) memristor and an a-IGZO TFT. The neuron has excellent spike encoding ability and dual sensitivity to NO2 gas and UV light. Additionally, the proposed self-adaption and lateral regulation circuits mimic the rich interconnection and feedback mechanisms of biological neurons.
Article
Engineering, Electrical & Electronic
C. Zhang, B. F. Yang, D. Wang, Z. Y. Zhou, C. Y. Han, L. X. Qian, P. T. Lai, X. D. Huang
Summary: A new synaptic transistor is proposed, which uses the M-OH defect at the back channel for weight modulation instead of the gate dielectric. This transistor exhibits high carrier mobility by suppressing Coulomb scattering and demonstrates typical synaptic functions. Simulation results also confirm its capability for high recognition accuracy in neuromorphic computing.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Multidisciplinary Sciences
Bin Jia, Chao Zhang, Min Liu, Zhen Li, Jian Wang, Li Zhong, Chuanyu Han, Ming Qin, Xiaodong Huang
Summary: A full integration of miniaturized transparent energy, electronic, and sensing devices using InGaZnO greatly enhances the functions of transparent electronics. Each device, including a transparent lithium-ion battery, a thin-film transistor, and a photodetector, demonstrates acceptable performance. The devices also show collaborative capabilities to achieve systematic functions, such as charging the battery with alternating-current signals using the thin-film transistor as a rectifier and using the charged battery as on-chip power for the photodetector.
NATURE COMMUNICATIONS
(2023)
