Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 5, Pages 1817-1822Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2817637
Keywords
Indium-gallium-oxide (IGO); oxygen concentrations; solar-blind photodetectors
Funding
- Ministry of Science and Technology of Taiwan, ROC [MOST 104-2221-E-168-011-MY3, MOST 105-2221-E-006-123, MOST 106-2221-E-009-201, MOST 106-2623-E-006-011-D]
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In this paper, amorphous indium-gallium-oxide solar-blind metal-semiconductor-metal photodetectors were fabricated by using co-sputtering method. Three samples with different oxygen concentrations, namely, sample A without oxygen, sample B with 2% oxygen concentration, and sample C with 4% oxygen concentration, were investigated. The applied bias was 5 V during device characterization. The ultraviolet (UV)-to-visible rejection ratios were 39, 9.9 x 10(3), and 1.1 x 10(5) for samples A, B, and C, respectively. The dynamic responses of the decay times were 5.79/52.12 s, 1.96/30.49 s, and 0.02/0.75 s for samples A, B, and C, respectively. In summary, the 4% oxygen concentration sample exhibited excellent UV-to-visible rejection ratio and superior decay time.
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