Characteristics of GaN Metal-Insulator-Semiconductor-Insulator-Metal Ultraviolet Photodiodes Using Al2O3, HfO2, and ZrO2 as Insulators

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Title
Characteristics of GaN Metal-Insulator-Semiconductor-Insulator-Metal Ultraviolet Photodiodes Using Al2O3, HfO2, and ZrO2 as Insulators
Authors
Keywords
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Journal
IEEE SENSORS JOURNAL
Volume 18, Issue 11, Pages 4477-4481
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-03-03
DOI
10.1109/jsen.2018.2811414

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