4.5 Article

Ultracompact Electro-Optical Modulator-Based Ge2Sb2Te5 on Silicon

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 30, Issue 3, Pages 250-253

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2017.2783928

Keywords

Integrated optics; optical modulation; electroabsorption; phase change material

Funding

  1. National Natural Science Foundation of China [61505092, 61675107]
  2. Natural Science Foundation of Zhejiang Province [LQ15F050001, LY18F050005]
  3. Natural Science Foundation of Ningbo [2015A610122]
  4. K. C. Wong Magna Fund at Ningbo University

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We propose an electrically driven electrooptical modulator integrated with the phase-change material Ge2Sb2Te5 (GST). This modulator incorporates a hybrid Si-GST-Cu waveguide with input and output Si waveguides. For the waveguide modulator with an active segment of 0.2 mu m(2), the switched phase is stable with off/on extinction ratios of >5.4 dB on the entire C-band. Since the phase change of GST only consumes energy during the stated transitions, the energy consumption per bit for this nanosize device is ideally low on the order of sub-nJ per cycle.

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