A 290-mV, 3.34-MHz, 6T SRAM With pMOS Access Transistors and Boosted Wordline in 65-nm CMOS Technology

Authors

Keywords

Journal

Volume 53, Issue 2, Pages 656-667

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2017-09-19

DOI

10.1109/jssc.2017.2747151

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