Article
Chemistry, Multidisciplinary
Xin Li, Yijun Zhang, Mingxiao Li, Yang Zhao, Lingqian Zhang, Chengjun Huang
Summary: An improved protocol for preparing 2D colloidal monolayers at the air/water interface was proposed, resulting in wafer-scale monolayers with increased crystal domain size and prevention of nanosphere sinking.
Article
Chemistry, Analytical
Shaoxiong Wu, Cheng Chen, Xihang Wu, Feng Tian, Yungui Ma, Yang Xu, Huan Hu
Summary: A scalable nanofabrication approach is reported in this study for the fabrication of hexagonal packed complementary vertically coupled plasmonic (CVCP) structures for surface-enhanced infrared absorption (SEIRA) applications. The CVCP structure contains dense plasmonic nanoparticles inside a three-dimensional cavity nanoantenna array, generating a solid localized electric field inside the cavity. By optimizing the height of the silicon nanopedestals, a high SEIRA electric-field enhancement was achieved, with an enhancement factor of 2.1 x 103 demonstrated using a representative monolayer octadecanethiol on the optimized structure geometry. When the detection area was extended to square millimeters, the limit of detection of monolayer octadecanethiol on the CVCP substrate reached 10 nM, four orders of magnitude lower than that on a flat gold substrate. This study demonstrates a feasible fabrication approach for producing three-dimensional nanoantenna structures with high enhancement factors in a scalable fashion, enabling the practical application of SEIRA substrates.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Article
Chemistry, Analytical
Youngseok Lee, Yebin You, Chulhee Cho, Sijun Kim, Jangjae Lee, Minyoung Kim, Hanglim Lee, Youngjun You, Kyungman Kim, ShinJae You
Summary: Direct wafer bonding is a promising technique for next-generation semiconductor devices, with plasma playing a crucial role in lowering process temperatures. This study evaluates the various process steps of Si-SiO2 wafer bonding through experimental studies, showing the need for optimizing plasma conditions and considering factors like time intervals between steps. The results suggest a trade-off between bonding strengths and interfacial voids with increasing input power for plasma treatment, highlighting the importance of thorough research to maximize bonding strengths.
Article
Engineering, Chemical
Dongling Li, Xiaohan Cui, Mao Du, Ying Zhou, Fenfen Lan
Summary: The study explores a combined hydrophilic activated Si/Si wafer direct bonding process based on wet chemical activation and O-2 plasma activation, and investigates its effect on bonding interface characteristics. The role of water molecules in the chemical bonds at the bonding interface, which affects bonding strength and voids' characteristics, is highlighted. Control of water molecule management leads to improved bonding results.
Article
Chemistry, Physical
Donglin Huang, Ruoyun Ji, Liqiang Yao, Jinlong Jiao, Xiaoqiang Chen, Cheng Li, Wei Huang, Songyan Chen, Shaoying Ke
Summary: This study reports the nucleation of dislocations in Ge/Si bonded pairs annealed at low temperatures (≤400 degrees C), revealing two types of dislocation networks near the bonded interface. Thermal stress is identified as the main driving force for dislocation nucleation, with the annealing temperature impacting the type and distribution of dislocations. A kinetic model is constructed to explain the strain relaxation process and dislocation behavior, showing that heterogeneous nucleation dominates at low annealing temperatures while a multiplication mechanism becomes active at elevated temperatures.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Zhenghao Shen, Wenhui Xu, Yang Chen, Jiajie Lin, Yuhuan Xie, Kai Huang, Tiangui You, Genquan Han, Xin Ou
Summary: Heterogeneous integration of β-Ga2O3 on SiC substrate solves the thermal dissipation issue for high-power electronics. Hydrophilic bonding at elevated temperatures was used to transfer a high-quality β-Ga2O3 film to the SiC substrate via the ion-cutting technique. The surface blistering and internal pressure in blisters during ion-cutting process were systematically investigated. The resulting β-Ga2O3/4H-SiC material showed excellent performance after chemical mechanical polishing.
SCIENCE CHINA-MATERIALS
(2023)
Article
Physics, Applied
Takehiko Kikuchi, Munetaka Kurokawa, Naoki Fujiwara, Naoko Inoue, Takuo Hiratani, Toshiyuki Nitta, Takuya Mitarai, Yuhki Itoh, Chang-Yong Lee, Akira Furuya, Yoshitaka Oiso, Nobuhiko Nishiyama, Hideki Yagi
Summary: This study investigates the direct bonding process of InP chips on an SOI wafer using surface hydrophilization by UV-ozone treatment. The study finds that the treatment has negligible impact on surface roughness. The observation of a high-quality III-V/Si bonding interface without crystal defects is verified in a scanning transmission electron microscope observation. the study also fabricates Fabry-Perot lasers with III-V gain and Si waveguide regions using this bonding process, and achieves continuous operation at different temperatures.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Analytical
Wenting Zhang, Caorui Zhang, Junmin Wu, Fei Yang, Yunlai An, Fangjing Hu, Ji Fan
Summary: In this study, SiC direct bonding using O-2 plasma activation was investigated, showing a potential low-cost and efficient surface activation method. High bonding uniformity and strength were achieved through C-SAM scanning, with interface analysis revealing the formation of Si-O, C-O, and C-C bonds at the bonding interface through TEM and EDX.
Article
Materials Science, Multidisciplinary
Oriol Colomer-Ferrer, Serni Toda Cosi, Ylli Conti, David E. Medina-Quiroz, Leonardo Scarabelli, Agustin Mihi
Summary: Templated self-assembly is a versatile method for fabricating plasmonic ordered arrays, and the modification before and after assembly can control the optical properties. Thermal annealing can improve the quality factor of plasmonic resonance in gold nanoparticle arrays.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Biophysics
Feng Tian, Meixi Li, Shaoxiong Wu, Lei Li, Huan Hu
Summary: Insects and plants possess bactericidal properties through surface nanostructures, such as nanospikes, which can physically eliminate bacteria without the use of antibiotics or chemicals. However, current methods for producing nanospikes lack the ability to create uniform nanostructures on a large scale and in a cost-effective way. This paper demonstrates a scalable nanofabrication method using nanosphere lithography and reactive ion etching to construct nanospike surfaces. Silicon nanospikes with uniform spacing similar to biological nanospikes were successfully fabricated, and their bactericidal properties were quantitatively measured and confirmed.
COLLOIDS AND SURFACES B-BIOINTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Romain Stricher, Paul Gond-Charton, Amrid Amnache, Jose Francisco Ambia Campos, Luc Frechette, Dominique Drouin, Serge Ecoffey
Summary: This paper demonstrates the use of Chemical Mechanical Polishing to reduce the RMS roughness of as-deposited ISDP, enabling direct bonding to polycrystalline and monocrystalline Si, as well as thermal SiO2. Strong bondings with high surface energies and adherence energy are achieved after annealing, allowing for void-free assemblies. Hermeticity analysis shows low leak rates in cavities sealed by ISDP direct bonding.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Pierre Montmeat, Jerome Dechamp, Gregory Enyedi, Frank Fournel, Zacharoula Zavvou, Vincent Jousseaume
Summary: In this study, ultra-thin iCVD polysiloxane films were proposed as adhesives for silicon wafer bonding. It was found that the thickness and elaboration temperature of the polymer had no significant impact on bonding properties, but an increase in bonding temperature led to stronger adherence.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Mark Ferguson, Mohamed Najah, Frederic A. Banville, Mohamed Boucherit, Paul Gond-Charton, Jacques Renaud, Luc Frechette, Francois Boone, Serge Ecoffey, Serge A. Charlebois
Summary: This study explores the compatibility of Ru with Al-Ge eutectic wafer bonding. Experimental results show that Ru is stable and offers good melt wettability in the presence of Al and Ge. The melting temperature of Al-Ge eutectic is found to decrease slightly in the presence of Ru contamination within a specific range. Wafer-level packaged devices and MEMS with Ru contacts demonstrate strong bond outcomes. These findings suggest that Ru has high compatibility with Al-Ge eutectic bonding.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2022)
Article
Chemistry, Multidisciplinary
Fengxuan Wang, Xiang Yang, Yongqiang Zhao, Jingmin Wu, Zhiyu Guo, Zhi He, Zhongchao Fan, Fuhua Yang
Summary: This study investigated the low-temperature direct bonding of SiC/Si through O-2 plasma activation. After optimization, a high bonding efficiency of over 90% was achieved. Surface activation was carried out through reactive ion etching (RIE) O-2 plasma without causing significant damage. A smooth and void-free interface was observed, along with a significant amorphous oxide layer. By increasing the annealing temperature, the thickness of the amorphous layer decreased significantly. The mechanism of SiC/Si low-temperature plasma-activated bonding was discussed based on systematic experiments and analysis.
APPLIED SCIENCES-BASEL
(2022)
Article
Engineering, Electrical & Electronic
Yongqiang Zhao, Wen Liu, Yidi Bao, Fuhua Yang, Xiaodong Wang
Summary: In this study, we achieved high-strength GaAs/Si direct bonding structures using the plasma-activated bonding method. The surface roughness and height of GaAs wafers were found to have a greater impact on the bonding strength than Si wafers. Additionally, the PAB method effectively controlled the plasma-induced damage in GaAs, resulting in a thin amorphous layer at the GaAs/Si interface.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Talha F. Canan, Savas Kaya, Avinash Karanth, Hao Xin, Ahmed Louri
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2019)
Article
Materials Science, Multidisciplinary
Daniel J. Carbaugh, Savas Kaya, Faiz Rahman
MATERIALS RESEARCH EXPRESS
(2019)
Article
Materials Science, Coatings & Films
J. P. Corbett, J. Guerrero-Sanchez, J. C. Gallagher, A. -O. Mandru, A. L. Richard, D. C. Ingram, F. Yang, N. Takeuchi, A. R. Smith
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2019)
Article
Engineering, Electrical & Electronic
Akanksha Rohit, Savas Kaya
Summary: This study presents wearable capacitive patches with engineered dielectrics for strain and piezoelectric sensing, showing enhanced performance without sacrificing durability. By incorporating high-k materials like Barium Titanate nanoparticles, the strain sensor's gauge factor is doubled and piezoelectricity induced in PDMS sensors, with Corona poling further improving their voltage output. The patches are capable of detecting multiple stimuli simultaneously and offer unique capabilities for biomedical and robotic applications.
IEEE SENSORS JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
Juvinch R. Vicente, Wojciech M. Jadwisienczak, Savas Kaya, Jixin Chen
Summary: Photovoltaics based on lead halide perovskite (LHP) materials have gained interest for their high conversion efficiency and low cost. However, current fabrication methods require inert environments. This study investigates the effect of lead source and device architecture on the quality of LHP films prepared under ambient conditions. Results show that LHP prepared from PbI2 has poor material morphology, while LHP prepared from PbCl2 and PbAc2 on a mesoporous TiO2 scaffold show superior quality. A full perovskite solar cell with over 8.0% PCE is fabricated using an ambient-compatible hole transport layer.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Computer Science, Hardware & Architecture
Talha F. Canan, Savas Kaya, Harsha Chenji, Avinash Karanth
Summary: A comprehensive simulation study demonstrates fine-grain reconfigurability in CMOS circuits using WFE in SB FinFETs for sub-10-nm gate length. The study explores new gate circuits and ultracompact reconfigurable logic circuits using WFE, showing potential for power and chip area savings. The research also discusses tradeoffs between the number of metal work-functions used, circuit complexity, and performance metrics.
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS
(2021)
Article
Engineering, Electrical & Electronic
Siqin Liu, Talha Furkan Canan, Harshavardhan Chenji, Soumyasanta Laha, Savas Kaya, Avinash Karanth
Summary: This paper proposes an efficient and high-throughput DNN accelerator called e-WiNN, which utilizes extended wireless technology to optimize circuit design and data transmission. The results show significant energy savings and performance improvements compared to both wired accelerators and prior wireless accelerators.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Materials Science, Coatings & Films
Sneha Upadhyay, Tyler Erickson, Hannah Hall, Ashok Shrestha, David C. Ingram, Kai Sun, Juan Carlos Moreno Hernandez, Gregorio Hernandez Cocoletzi, Noboru Takeuchi, Arthur R. Smith
Summary: This paper discusses the synthesis of crystalline Mn3Sn thin films on Al2O3 (0001) substrates using molecular beam epitaxy, and monitoring the growth in situ using reflection high energy electron diffraction and ex situ using x-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. Unexpected results of in-plane lattice constants and strain effects are observed, and two possible orientation relationships between the films and substrates are proposed. Theoretical models and detailed analysis of experimental data are provided to explain the observed phenomena.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Chemistry, Physical
Sneha Upadhyay, Tyler Erickson, Hannah Hall, Ashok Shrestha, David C. Ingram, Kai Sun, Juan Carlos Moreno Hernandez, Gregorio Hernandez Cocoletzi, Noboru Takeuchi, Arthur R. Smith
Summary: This paper discusses the synthesis of Mn3Sn layers on Al2O3 (0001) substrate without a buffer layer using molecular beam epitaxy. The study found that the resulting film is predominantly c-plane oriented and exhibits a 3-dimensional morphology.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Physical
Flavia P. N. Inbanathan, Katherine Leslee A. Cimatu, David C. C. Ingram, Uriel Joseph Erasquin, Kiran Dasari, Muhammad Shehzad Sultan, Muhammad Sajjad, Vladimir Makarov, Brad R. R. Weiner, Gerardo Morell, Payman Sharifi Abdar, Wojciech M. M. Jadwisienczak
Summary: This study demonstrates the room-temperature paramagnetism in graphene quantum dots doped with nitrogen up to 3.26%. The synthesized nitrogen-doped graphene quantum dots were carefully characterized for their morphology, optical properties, and magnetic behavior using various techniques. The results show a hexagonal crystalline structure and the presence of pyridinic nitrogen configuration, which exhibits paramagnetic behavior at room temperature with a magnetization of 20.8 emu/g.
Article
Materials Science, Multidisciplinary
Fahad Mahmood, David Ingram, Xi He, J. A. Clayhold, Ivan Bozovic, N. P. Armitage
Summary: Using time-domain terahertz spectroscopy and mutual inductance measurements, this study investigates the low-energy electrodynamic response of overdoped La2-xSrxCuO4 films exposed to ion irradiation. The results show that the transport scattering rate is directly proportional to the radiation dose at all temperatures, and the relationship between Tc, the superfluid density, and the scattering rates in the superconducting state is different from the predictions based on existing theories.
Article
Computer Science, Hardware & Architecture
Talha F. Canan, Savas Kaya, Avinash Karanth, Ahmed Louri
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS
(2019)
Article
Materials Science, Multidisciplinary
F. Ehre, C. Dufour, O. Blazquez, B. Garrido, W. M. Jadwisienczak, D. C. Ingram, J. Cardin, F. Gourbilleau, X. Portier, C. Guillaume, Baodan Liu, C. Labbe
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2019)
Article
Computer Science, Hardware & Architecture
Avinash Karanth, Savas Kaya, Ashif Sikder, Daniel Carbaugh, Soumyasanta Laha, Dominic DiTomaso, Ahmed Louri, Hao Xin, Junqiang Wu
IEEE TRANSACTIONS ON SUSTAINABLE COMPUTING
(2019)
Proceedings Paper
Computer Science, Information Systems
Yunus Kelestemur, Soumyasanta Laha, Savas Kaya, Avinash Kodi, Hao Xin, Ahmed Louri
2018 IEEE 61ST INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS)
(2018)