4.3 Article

Improved thermoelectric efficiency in p-type ZnSb through Zn deficiency

Journal

FUNCTIONAL MATERIALS LETTERS
Volume 8, Issue 2, Pages -

Publisher

WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S1793604715500289

Keywords

ZnSb; point defect scattering; thermoelectric property

Funding

  1. Fundamental Research Funds for the Central Universities [31920140080]

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We herein report a feasible approach to improve the thermoelectric performance of p-type ZnSb compound by Zn content regulation. It is found that Zn vacancies formed by Zn deficiency not only efficiently enhance the electrical conductivity due to the improved hole concentration but also markedly lower the lattice thermal conductivity on account of the reinforced point defect scattering of phonons. The ZnSb compound with a nominal 3 mol.% Zn deficiency shows a maximum thermoelectric figure of merit ZT of similar to 0.8 at 700K which is a similar to 60% improvement over the pristine sample. The strategies of further enhancing the performance of ZnSb-based material have been discussed.

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