Article
Optics
F. Gallazzi, M. Jimenez-Rodriguez, E. Monroy, P. Corredera, M. Gonzalez-Herraez, F. B. Naranjo, J. D. Ania Castanon
Summary: This research demonstrates the experimental realization of a simple passive ultrafast harmonically mode-locked ultralong ring fiber laser architecture using InN-based SESAMs. The generated ultrashort pulses have high peak power without the need for external amplification stages, meeting the requirements for high peak power demanding applications such as materials processing.
OPTICS AND LASER TECHNOLOGY
(2021)
Article
Optics
Jianan Duan, Bozhang Dong, Weng W. Chow, Heming Huang, Shihao Ding, Songtao Liu, Justin C. Norman, John E. Bowers, Frederic Grillot
Summary: This work compares the FWM effect in epitaxial QD lasers grown on silicon with QW lasers. The results show good agreement between theory and experiment, with the measured FWM coefficient matching theoretical predictions. Despite the same FWM coefficient, p-doped QD lasers exhibit higher gain in signal power than undoped lasers. QD lasers, with their near-zero linewidth enhancement factor, have FWM coefficients and conversion efficiency more than one order of magnitude higher than QW lasers, leading to self-mode locking. These findings are important for developing on-chip sources for photonic integrated circuits on silicon.
PHOTONICS RESEARCH
(2022)
Article
Multidisciplinary Sciences
Zhongliang Qiao, Xiang Li, Jia Xu Brian Sia, Wanjun Wang, Hong Wang, Zaijin Li, Zhibin Zhao, Lin Li, Xin Gao, Baoxue Bo, Yi Qu, Guojin Liu, Chongyang Liu
Summary: This paper investigates the modal gain characteristics of InGaAs/GaAs double quantum well laser and finds that the bias voltage of the saturable absorber has a significant effect on the laser's wavelength and gain characteristics.
SCIENTIFIC REPORTS
(2022)
Article
Optics
Hao Liang, Tingting Jin, Chaodan Chi, Jialiang Sun, Xiaolei Zhang, Tiangui You, Min Zhou, Jiajie Lin, Shumin Wang
Summary: This research successfully fabricated communication band InAs QD ridge waveguide lasers on GaAsOI substrates using ion-slicing technique and molecular beam epitaxy growth. The devices showed comparable performance to those on GaAs substrates, demonstrating great potential for highly integrated light sources on silicon for photonic integrated circuits.
Article
Optics
Youxin Mao, Guocheng Liu, Khan Zeb, Zhenguo Lu, Jiaren Liu, Philip J. Poole, Chun-Ying Song, Pedro Barrios
Summary: This paper presents a broadband optical frequency comb source based on InAs/InP quantum dot technology. The device exhibits low optical linewidth and pulse-to-pulse timing jitter, making it suitable for high-capacity data transmission.
Article
Optics
Jing-Zhi Huang, Wen-Qi Wei, Jia-Jian Chen, Zi-Hao Wang, Ting Wang, Jian-Jun Zhang
Summary: This study achieved the monolithic integration of a stable III-V laser on a standard silicon-on-insulator substrate, proposed a double-side heat dissipation design, successfully demonstrated room-temperature operation of InAs/GaAs QD lasers, and showed the effectiveness of top heat sink design through thermal profile simulation.
Article
Materials Science, Multidisciplinary
Zhujing Wu, Jiangyun Dai, Yajie Wu, Jiulin Yang, Hong Zhang, Shouhuan Zhou
Summary: An all-fiber mode-locked erbium-doped laser using Co2+:ZnSe thin film as the saturable absorber was experimentally demonstrated, showing stable pulse operation. The thin film exhibited high optical quality and effective mode-locking performance, providing a new research direction in the field of fiber lasers.
OPTICAL MATERIALS EXPRESS
(2021)
Article
Optics
Yunyun Ding, Wolfgang Rehbein, Martin Moehrle, Marlene Zander, Martin Schell, Kevin Kolpatzeck, Jan C. Balzer
Summary: High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) were investigated. Short pulse trains with sub-ps pulse widths were achieved by compensating dispersion, demonstrating the potential for photonic applications in optical communications.
Article
Optics
Mengyun Hu, Jiawei Shen, Yuzhi Cao, Shuai Yuan, Heping Zeng
Summary: We present a fundamentally mode-locked Yb-doped solid-state fiber laser with a repetition rate of 1 GHz and a pulse duration of 48 fs. By employing nonlinear-polarization-evolution (NPE) mode-locking, the laser achieves an average power of up to 286 mW and a spectrum bandwidth of 26 nm, supporting a 48 fs pulse duration. The laser can self-start and the central wavelength is tunable from 1032.4 nm to 1035.6 nm. To the best of our knowledge, this is the shortest pulse duration directly obtained by GHz fundamentally mode-locked Yb-fiber lasers.
Article
Optics
Zi-Hao Wang, Wen-Qi Wei, Qi Feng, Ting Wang, Jian-Jun Zhang
Summary: Silicon-based InAs quantum dot mode locked lasers offer advantages of high frequency, low power consumption, and low-cost production, but larger linewidths may introduce additional phase noise. A demonstration of a single section MLL grown on a silicon substrate showed significant reduction in RF linewidth through self-injection feedback locking.
Article
Optics
Kaiyin Feng, Chen Shang, Eamonn Hughes, Andrew Clark, Rosalyn Koscica, Peter Ludewig, David Harame, John Bowers
Summary: We have successfully grown quantum dot (QD) lasers with electrical pumping on 300mm Si wafers for in-plane photonic integration. The O-band lasers with five QD layers were fabricated into standard Fabry-Perot ridge waveguide cavities and demonstrated high yield and reliable results. Furthermore, efforts to vertically align and couple monolithically integrated lasing cavities on silicon-on-insulator (SOI) wafers showed potential for 300mm-scale Si photonic integration with in-pocket direct molecular beam epitaxy (MBE) growth.
Article
Physics, Applied
Dong Han, Wen-Qi Wei, Ming Ming, Zihao Wang, Ting Wang, Jian-Jun Zhang
Summary: In recent years, there has been a strong demand for GaSb-on-Si direct heteroepitaxy to expand the operating wavelength range to mid-infrared and high-mobility applications. However, the growth of high-quality GaSb films on Si is challenging due to the generation of high-density defects. In this study, we proposed a novel design and growth strategy to achieve the annihilation of antiphase boundaries (APBs) and the reduction of threading dislocation density (TDD) through the use of a V-grooved Si hollow structure and InGaSb/GaSb dislocation filtering layers. The reported results greatly improve the overall quality of epitaxial Si-based antimonide, benefiting various devices and critical applications.
APPLIED PHYSICS LETTERS
(2023)
Article
Optics
Yongli Wang, Bojie Ma, Jian Li, Zhuoliang Liu, Chen Jiang, Chuanchuan Li, Hao Liu, Yidong Zhang, Yang Zhang, Qi Wang, Xinyu Xie, Xiaolang Qiu, Xiaomin Ren, Xin Wel
Summary: In this paper, a simple method is presented to reduce the threading dislocation density (TDD) by using a GaAs buffer, eliminating the need for complicated dislocation filter layers (DFLs) and intermediate buffer layers. A high-quality epitaxial GaAs film was grown on Si (001) by MOCVD, with a TDD of 9.4 x 10(6) cm(-2). InAs/GaAs QDs were grown on this GaAs/Si (001) virtual substrate by MBE, and a high-power QD laser was fabricated, achieving a room temperature continuous-wave output power of 138mW with a threshold current density of 397 A/cm(2) and a lasing wavelength of 1306 nm. This work proposes a simplified method for fabricating high-power QD lasers, which could promote the application of photonic integrated circuits.
Article
Engineering, Electrical & Electronic
Zhong Min, Lin Xiaoping, Ruan Qiujun, Wang Hang, Hu Zhijie, Fu Yu, Huang Fengshan, Huang Liuping, Zhou Huili, Luo Zhengqian
Summary: This study presents an all-fiber dissipative soliton laser that can generate different bound state dissipative solitons by adjusting pump power and polarization states. By using anomalous dispersion fiber for pulse compression and managing dispersion in the cavity, a broadband spectrum is achieved. The widest spectrum dissipative soliton based on carbon nanotube is obtained with a spectral width of 35 nm.
LASER & OPTOELECTRONICS PROGRESS
(2021)
Article
Engineering, Electrical & Electronic
Mohammad Heydari, Aref Rasoulzadeh Zali, Reza Esmailpour Gildeh, Ali Farmani
Summary: In this study, the structure of quantum dot passively mode-locked lasers (QDMLLs) with colliding-pulse mode-locked (CPM) method was investigated to enhance its performance for ultrahigh-bit-rate compared to self-colliding pulse mode-locking (SCPM) method. Through numerical simulations, it was found that the bit rate in the CPM structure is twice that of the SCPM structure, and the grating coupling factor (GCF) changes were shown to affect the laser output power from pulsed to continuous wave operation within a certain range.
IEEE SENSORS JOURNAL
(2022)
Article
Physics, Applied
Jennifer Selvidge, Eamonn T. Hughes, Justin C. Norman, Chen Shang, M. J. Kennedy, Mario Dumont, Andrew M. Netherton, Zeyu Zhang, Robert W. Herrick, John E. Bowers, Kunal Mukherjee
Summary: The study finds that adding trapping layer filters at either 80 nm or 180 nm from the active region in epitaxially integrated InAs quantum dot lasers on on-axis silicon substrates can significantly reduce device degradation at 60 degrees C, enhancing reliability. Data after 3000 hours suggest that incorporating trapping layers at a shorter distance from the active region (80 nm) is more effective than incorporating these layers further away.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Michele Zenari, Matteo Buffolo, Carlo De Santi, Justin Norman, Gaudenzio Meneghesso, John E. Bowers, Enrico Zanoni, Matteo Meneghini
Summary: This study aims to identify, analyze and compare defects in III-As materials based on dislocation density and the presence/absence of quantum dots. Results show that the type and location of defects in III-As materials vary when grown on different substrates with varying dislocation densities.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Correction
Optics
Warren Jin, Qi-Fan Yang, Lin Chang, Boqiang Shen, Heming Wang, Mark A. Leal, Lue Wu, Maodong Gao, Avi Feshali, Mario Paniccia, Kerry J. Vahala, John E. Bowers
Summary: The original paper has been corrected.
Article
Physics, Applied
Kunal Mukherjee, Jennifer Selvidge, Eamonn Hughes, Justin Norman, Chen Shang, Robert Herrick, John Bowers
Summary: The study shows that metastable misfit dislocations can form between layers with significant differences in dislocation mobility, even when the layers are below the critical thickness. In the case of the InAs quantum dot laser on silicon, dislocations are driven by thermal expansion mismatch strain, leading to long MDs and gradual degradation of device performance. Carefully introducing indium-containing trapping layers can displace MDs from the active region, extending the laser lifetime. Overall, controlling dislocation glide kinetics and the introduction of indium are key factors in defect engineering for devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Optics
Yating Wan, Chao Xiang, Joel Guo, Rosalyn Koscica, Mj Kennedy, Jennifer Selvidge, Zeyu Zhang, Lin Chang, Weiqiang Xie, Duanni Huang, Arthur C. Gossard, John E. Bowers
Summary: Significant improvements in III-V/Si epitaxy have propelled quantum dots (QDs) to the forefront of Si photonics, laying the foundation for efficient, scalable, and multifunctional integrated systems. This study details the design, fabrication, and characterization of a platform for efficient coupling of QD laser output to Si waveguides. Record-setting evanescent QD distributed feedback lasers on Si are reported, showcasing impressive performance metrics.
LASER & PHOTONICS REVIEWS
(2021)
Article
Optics
Andreas Boes, Thach G. Nguyen, Lin Chang, John E. Bowers, Guanghui Ren, Arnan Mitchell
Summary: This study presents a new approach to achieve high extinction short and long pass wavelength filters in the integrated photonic platform of lithium niobate on insulator. By adjusting the waveguide dimensions, it is possible to control the filter edge wavelength and achieve high extinction dB/cm. These findings pave the way for integrating multi wavelength experiments on chip for the next generation of photonic integrated circuits.
Article
Engineering, Electrical & Electronic
Christopher R. Fitch, Igor P. Marko, Aidas Baltusis, Daehwan Jung, Justin C. Norman, John E. Bowers, Stephen J. Sweeney
Summary: Silicon-based laser diodes demonstrate high performance and stable operation at relatively low temperatures. The study shows that p-doping can increase the temperature sensitivity of the devices, but also results in higher threshold current densities.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Matteo Buffolo, Federico Lain, M. Zenari, Carlo De Santi, Justin Norman, John E. Bowers, Robert W. Herrick, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Summary: This paper investigates the origin of the optical degradation of InAs quantum dot laser diodes epitaxially grown on silicon. The temperature acceleration of the degradation process is quantitatively evaluated through constant-current stress experiments at different temperatures. The results suggest that the degradation is related to the recombination-enhanced diffusion of Be, the p-type dopant, or the lattice defects limiting Be diffusion. These findings provide new insights on the microscopic origin of the gradual optical degradation of quantum-dot lasers and have wide application in silicon photonics.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Review
Optics
Lin Chang, Songtao Liu, John E. Bowers
Summary: Integrated photonics offers an attractive approach to realizing optical frequency comb sources, potentially revolutionizing fields such as information processing, time-frequency metrology, and sensing. The article comprehensively examines strategies for optical frequency comb generation in integrated photonics and provides detailed appraisals in the context of prospective applications. High-level integration of optical frequency combs in photonic integrated circuits is summarized, along with a proposed roadmap for transitioning advanced optical frequency comb systems from the lab to the broader world.
Article
Materials Science, Multidisciplinary
Zeyu Zhang, Chen Shang, Justin C. Norman, Rosalyn Koscica, Kaiyin Feng, John E. Bowers
Summary: Quantum dot (QD) lasers grown on silicon have shown promising characteristics, but the technology enabling growth and integration of these lasers on a silicon photonic chip has not yet been demonstrated. A novel device platform has been designed to integrate the QD active region with passive waveguide structures, allowing for the successful demonstration of various high-performance lasers on this platform.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Mario Dumont, Songtao Liu, M. J. Kennedy, John Bowers
Summary: This paper focuses on the efficiency of optical combs generated by quantum dot mode-locked lasers (QDMLLs) and compares their performance with other light sources.
APPLIED SCIENCES-BASEL
(2022)
Article
Optics
Weiqiang Xie, Chao Xiang, Lin Chang, Warren Jin, Jonathan Peters, John E. Bowers
Summary: This study proposes a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the silicon-on-insulator (SOI) platform, aiming to extend the capabilities of on-chip devices. By developing low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides, the researchers successfully demonstrate sub-milliwatt-threshold Kerr frequency comb generation in ultrahigh-Q AlGaAs microrings. This integration of mature silicon photonics technology with efficient nonlinear functionalities provided by III-V materials advances the emerging applications of chip-based nonlinear engines.
PHOTONICS RESEARCH
(2022)
Article
Optics
Akhilesh S. P. Khope, Robert Zhang, Roger Helkey, Rod C. Alferness, Adel A. M. Saleh, John E. Bowers
Summary: This article presents a compact 4x4 wavelength selective switch with 50% fewer electrical signal pads compared to the previous generation. The loss and crosstalk of the switch in different paths are reported and measured. The results show a median loss of 5.32 dB and a worst-case crosstalk of -35 dB. The improvement in the tuning range of microring resonators compared to the previous generation is also demonstrated. The switch is capable of supporting 8 channels with a spacing of 400 GHz.
Article
Engineering, Electrical & Electronic
Paul A. Morton, Chao Xiang, Jacob B. Khurgin, Christopher D. Morton, Minh Tran, Jon Peters, Joel Guo, Michael J. Morton, John E. Bowers
Summary: This paper introduces a new Integrated Coherent Tunable Laser (ICTL) that offers ultra-wideband wavelength tuning and ultra-low noise performance. The ICTL is designed to be cost-effective and reliable through its utilization of III-V material and a CMOS foundry based Silicon Photonics platform. The ICTL's exceptional laser reflector performance, extended laser cavity length, and low linewidth and phase noise enable highly-coherent output. The ICTL has achieved record integrated laser performance and shows great potential for next-generation applications such as WDM transmission systems, fiber-optic and medical-wearable sensing systems, and automotive LiDAR systems.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
