Surface properties of SiO 2 with and without H 2 O 2 treatment as gate dielectrics for pentacene thin-film transistor applications

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Title
Surface properties of SiO 2 with and without H 2 O 2 treatment as gate dielectrics for pentacene thin-film transistor applications
Authors
Keywords
-
Journal
CHEMICAL PHYSICS LETTERS
Volume 691, Issue -, Pages 141-145
Publisher
Elsevier BV
Online
2017-11-10
DOI
10.1016/j.cplett.2017.11.016

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