Journal
CARBON
Volume 127, Issue -, Pages 681-687Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2017.11.053
Keywords
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Funding
- Japan Society for the Promotion of Science (JSPS) KAKENHI [JP24686020, JP26630026, JP16K14133]
- Casio Science Promotion Foundation
- Otsuka Toshimi Scholarship Foundation
- Grants-in-Aid for Scientific Research [16K14133, 15H03902] Funding Source: KAKEN
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Catalyst-assisted chemical etching is an emerging technology for fabricating a variety of three-dimensional nanostructures on a semiconductor surface for future electronic and optical devices. In contrast to conventional wet etching using noble metals, we performed a fundamental study on the chemical etching of a Ge surface assisted by dispersed sheets of reduced graphene oxide (rGO) in water with dissolved O-2 molecules. We found that a monolayer sheet of rGO on Ge does not act as a mask but as a chemical tool that enhances etching under the entire sheet. This is probably caused by the dissociation of adsorbed O-2 molecules at the edges of vacancies in an rGO sheet, which leads to the formation of a soluble GeO2 layer. We also propose that the reagents and by-products involved in this etching diffuse along the interface between an rGO sheet and the wall of etched Ge, which we believe is a key for achieving higher etching rates. This study is expected to lead to a nanoscale manufacturing process for semiconductor surfaces free from noble-metal contamination. (C) 2017 Elsevier Ltd. All rights reserved.
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