Journal
APPLIED SURFACE SCIENCE
Volume 441, Issue -, Pages 401-407Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2018.02.045
Keywords
First-principles calculation; GaAs monolayer; SHG response; Vacancy
Categories
Funding
- National Natural Science Foundation of China [61366001, 61604126]
- regional research innovation found for post graduate students of Xinjiang, China [XJGRI 2017031]
Ask authors/readers for more resources
Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAS) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs mono layer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices. (C) 2018 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available