4.7 Article

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

Journal

APPLIED SURFACE SCIENCE
Volume 436, Issue -, Pages 1067-1074

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2017.12.111

Keywords

Cobalt ferrite; Epitaxial thin films; Silicon device integration; Magnetic anisotropy

Funding

  1. Regional Government of Madrid [NANOFRONTMAGS2013/MIT-2850]

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Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mossbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets. (C) 2017 Elsevier B.V. All rights reserved.

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