Controlling the opto-electronic properties of nc-SiO x :H films by promotion of 〈220〉 orientation in the growth of ultra-nanocrystallites at the grain boundary
Controlling the opto-electronic properties of nc-SiO x :H films by promotion of 〈220〉 orientation in the growth of ultra-nanocrystallites at the grain boundary
Authors
Keywords
nc-SiO, x, :H network, Ultra-nanocrystalline component, 〈220〉 orientation, Grain boundary, Raman scattering, X-ray diffraction, Electron microscopy, Electron trapping centres
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