Journal
APPLIED PHYSICS LETTERS
Volume 112, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5014033
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Funding
- National Science Foundation [DGE-1144085]
- UC Santa Barbara Nanofabrication Facility, NSF
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Complex integrated circuits require multiple wiring layers. In complementary metal-oxide-semiconductor processing, these layers are robustly separated by amorphous dielectrics. These dielectrics would dominate energy loss in superconducting integrated circuits. Here, we describe a procedure that capitalizes on the structural benefits of inter-layer dielectrics during fabrication and mitigates the added loss. We use a deposited inter-layer dielectric throughout fabrication and then etch it away post-fabrication. This technique is compatible with foundry level processing and can be generalized to make many different forms of low-loss wiring. We use this technique to create freestanding aluminum vacuum gap crossovers (airbridges). We characterize the added capacitive loss of these airbridges by connecting ground planes over microwave frequency lambda/4 coplanar waveguide resonators and measuring resonator loss. We measure a low power resonator loss of similar to 3.9 x 10(-8) per bridge, which is 100 times lower than that of dielectric supported bridges. We further characterize these airbridges as crossovers, control line jumpers, and as part of a coupling network in gmon and fluxmon qubits. We measure qubit characteristic lifetimes (T(1)s) in excess of 30 mu s in gmon devices. Published by AIP Publishing.
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