Journal
APPLIED PHYSICS EXPRESS
Volume 11, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.11.031003
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Funding
- JSPS KAKENHI [JP15H03556, JP16H06415, JP16H06418, JP17H05335, JP17H06762]
- JST CREST [16815710]
- JST SICORP EU H2020 [720527]
- JST SICORP
- MOST in China
- Strategic Foundational Technology Improvement Support Operation of the Kansai Bureau of Economy, Trade and Industry
- Grants-in-Aid for Scientific Research [17K19078, 17H05335, 16H06415, 17H01063] Funding Source: KAKEN
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A novel fabrication process based on direct bonding technologies is proposed and demonstrated to achieve polarity inversion in AlN. High-angle annular dark-field scanning transmission electron microscopy observation clearly showed an atomically flat bonding interface and an abrupt transition from Al polarity (+c) to N polarity (-c) through a single monolayer. This ideal polarity inversion of III-nitride materials is expected to provide new insight into heteropolar device applications. (C) 2018 The Japan Society of Applied Physics
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