On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

Title
On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study
Authors
Keywords
Dislocation structure, Antiphase boundary, Tomography, Transmission electron microscopy, Semiconductor heterostructures
Journal
ACTA MATERIALIA
Volume 143, Issue -, Pages 121-129
Publisher
Elsevier BV
Online
2017-09-26
DOI
10.1016/j.actamat.2017.09.055

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