Defect States Control Effective Band Gap and Photochemistry of Graphene Quantum Dots

Graphene quantum dots(GQDs) have emerged as a new group of quantum-confined semiconductors in recent years, with possible applications as light absorbers, luminescent labels, electrocatalysts, and photoelectrodes for photoelectrochemical water splitting. However, their semiconductor characteristics, such as the effective band gap, majority carrier type, and photochemistry, are obscured by defects in this material. Herein, we use surface photovoltage spectroscopy (SPS) in combination with photoelectrochemical measurements to determine the parameters that are essential to the use of GQDs as next-generation semiconductor devices and photocatalysts. Our results show that ordered GQDs (1-6 nm) behave as p-type semiconductors, based on the positive photovoltage in the SPS measurements on Al, Au, and fluorine-doped tin oxide substrates, and generate mobile charge carriers under excitation of defect states at 1.80 eV and under band gap excitation at 2.62 eV. Chemical reduction with hydrazine removes some defects and increases the effective band gap to 2.92 eV. SPS measurements in the presence of sacrificial electron donor and acceptors show that photochemical charge carriers can be extracted and promote redox reactions. A reduced GQDs photocathode supports an unprecedented photocurrent of 50 mu A cm(-2) using K3Fe(CN)(6) as sacrificial electron acceptor. Additionally, while pristine GQDs do not photoreduce protons under visible light, hydrazine-treated GQDs generate H-2 from aqueous methanol under visible and UV light (0.04% quantum efficiency at 375 nm) without added co-catalysts. These findings are relevant to the use of GQDs in photochemical and photovoltaic energy-conversion systems.